ISC008N06LM6ATMA1 vs ISC028N03LF2SATMA1 Comparison

Detailed side-by-side comparison of ISC008N06LM6ATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC008N06LM6ATMA1 ISC028N03LF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 OptiMOS 5 30V
Polarity / Channel Type N-Channel Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 44 A —
Pulsed Drain Current (ID, pulse) at Tc 378 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 221 W —
Gate-Source Voltage (VGS) max +/-20 V —
RDS(on) max @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] —
Gate Threshold Voltage (VGS(th)) Logic Level (1.0 V to 2.4 V typical) —
Operating Temperature Range -55 C to +175 C (Tj) —
Package Type PG-TDSON-8 (Surface Mount) —
Mounting Style Surface Mount, Tape & Reel —
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS / Lead-Free Status RoHS Compliant, Lead-Free —
Halogen Free Yes —
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
Operating Junction Temperature — -55 C to +175 C
Package — PG-TDSON-8-62 (5x6 mm) with exposed pad
Mounting Type — Surface Mount
RoHS / Lead-Free — Yes (RoHS compliant)

Datasheets & Resources

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