ISC008N06LM6ATMA1 vs ISC028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC008N06LM6ATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC008N06LM6ATMA1
ISC008N06LM6ATMA1 - 60V OptiMOS 6 N-Channel MOSFET | Infineon
ISC008N06LM6ATMA1 β ActiveInfineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC008N06LM6ATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 30V |
| Polarity / Channel Type | N-Channel Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Ta | 44 A | β |
| Pulsed Drain Current (ID, pulse) at Tc | 378 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 221 W | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | β |
| Gate Threshold Voltage (VGS(th)) | Logic Level (1.0 V to 2.4 V typical) | β |
| Operating Temperature Range | -55 C to +175 C (Tj) | β |
| Package Type | PG-TDSON-8 (Surface Mount) | β |
| Mounting Style | Surface Mount, Tape & Reel | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free Status | RoHS Compliant, Lead-Free | β |
| Halogen-Free | Yes | β |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 24 A |
| Continuous Drain Current (ID) at TC=25C | β | 128 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 2.35 V |
| Power Dissipation at TA | β | 3 W |
| Power Dissipation at TC | β | 83 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package | β | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Mounting Type | β | Surface Mount |
| RoHS / Lead-Free | β | Yes (RoHS compliant) |