ISC008N06LM6ATMA1 vs ISC028N03LF2SATMA1 Comparación
Comparación detallada lado a lado de ISC008N06LM6ATMA1 por Infineon y ISC028N03LF2SATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC008N06LM6ATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 30V |
| Polarity / Channel Type | N-Channel Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 44 A | — |
| Pulsed Drain Current (ID, pulse) at Tc | 378 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 221 W | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | — |
| Gate Threshold Voltage (VGS(th)) | Logic Level (1.0 V to 2.4 V typical) | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C (Tj) | — |
| Package Type | PG-TDSON-8 (Surface Mount) | — |
| Estilo de montaje | Surface Mount, Tape & Reel | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free Status | RoHS Compliant, Lead-Free | — |
| Sin halógenos | Yes | — |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 128 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.35 V |
| Power Dissipation at TA | — | 3 W |
| Power Dissipation at TC | — | 83 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Encapsulado | — | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Tipo de montaje | — | Surface Mount |
| RoHS / Lead-Free | — | Yes (RoHS compliant) |