ISC008N06LM6ATMA1 vs ISC028N03LF2SATMA1 对比

详细并排对比 ISC008N06LM6ATMA1 出自 Infineon 和 ISC028N03LF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISC008N06LM6ATMA1 ISC008N06LM6ATMA1 - 60V OptiMOS 6 N-Channel MOSFET | Infineon

ISC008N06LM6ATMA1 - 60V OptiMOS 6 N-Channel MOSFET | Infineon

ISC008N06LM6ATMA1 ✓ 量产中
Infineon
ISC028N03LF2SATMA1 ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS

ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS

ISC028N03LF2SATMA1 ✓ 量产中

规格对比

参数 ISC008N06LM6ATMA1 ISC028N03LF2SATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 OptiMOS 5 30V
Polarity / Channel Type N-Channel Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 44 A —
Pulsed Drain Current (ID, pulse) at Tc 378 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 221 W —
Gate-Source Voltage (VGS) max +/-20 V —
RDS(on) max @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] —
Gate Threshold Voltage (VGS(th)) Logic Level (1.0 V to 2.4 V typical) —
工作温度范围 -55 C to +175 C (Tj) —
Package Type PG-TDSON-8 (Surface Mount) —
安装方式 Surface Mount, Tape & Reel —
MSL 等级 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS / Lead-Free Status RoHS Compliant, Lead-Free —
无卤 Yes —
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
工作结温 — -55 C to +175 C
封装 — PG-TDSON-8-62 (5x6 mm) with exposed pad
安装类型 — Surface Mount
RoHS / Lead-Free — Yes (RoHS compliant)

数据手册与资源

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