ISC009N03LF2SATMA1 vs ISZ028N03LF2SATMA1 Comparison

Detailed side-by-side comparison of ISC009N03LF2SATMA1 by Infineon and ISZ028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC009N03LF2SATMA1

ISC009N03LF2SATMA1 - 30V 341A 0.9mΞ© N-Channel MOSFET | Infineon

ISC009N03LF2SATMA1 βœ“ Active
Infineon
ISZ028N03LF2SATMA1 ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon

ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon

ISZ028N03LF2SATMA1 βœ“ Active

Specification Comparison

Parameter ISC009N03LF2SATMA1 ISZ028N03LF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.48 $0.49
Transistor Type N-Channel MOSFET β€”
Technology OptiMOSβ„’ trench StrongIRFET 2 (Trench MOSFET)
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta 43 A 22 A
Continuous Drain Current (ID) at Tc 341 A 128 A
Power Dissipation (PD) at Ta 3 W β€”
Power Dissipation (PD) at Tc 188 W β€”
On-Resistance RDS(on) max 0.9 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 2.35 V (typ) 2.35 V
Package PG-TDSON-8-62 (SuperSO8 5x6) PG-TSDSON-8 FL (FL = flat lead)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +175 Β°C (junction, [DATA_NEEDED: exact operating range from datasheet]) -55C to +175C (junction, typical)
Gate Drive Voltage (VGS) 10 V (typical for rated RDS(on)) β€”
MSL Level [DATA_NEEDED: MSL rating] 1
RoHS Status Compliant Compliant
FET Type β€” N-Channel
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max β€” 2.8 mΞ©
Power Dissipation (Tc) β€” 83 W
Power Dissipation (Ta) β€” 3 W
Gate Drive Voltage (recommended) β€” 10 V (logic level at 4.5 V)
Avalanche Energy Rated β€” Yes (single-pulse)
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg]

Datasheets & Resources

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