ISC009N03LF2SATMA1 vs ISZ028N03LF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC009N03LF2SATMA1 disebabkan oleh Infineon dan ISZ028N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC009N03LF2SATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ trench | StrongIRFET 2 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta | 43 A | 22 A |
| Continuous Drain Current (ID) at Tc | 341 A | 128 A |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| On-Resistance RDS(on) max | 0.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | 2.35 V |
| Kemasan | PG-TDSON-8-62 (SuperSO8 5x6) | PG-TSDSON-8 FL (FL = flat lead) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 °C to +175 °C (junction, [DATA_NEEDED: exact operating range from datasheet]) | -55C to +175C (junction, typical) |
| Gate Drive Voltage (VGS) | 10 V (typical for rated RDS(on)) | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |