ISC011N03L5SATMA1 vs BSC022N04LS6ATMA1 Comparison
Detailed side-by-side comparison of ISC011N03L5SATMA1 by Infineon and BSC022N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N03L5SATMA1
ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon
ISC011N03L5SATMA1 β ActiveInfineon
BSC022N04LS6ATMA1
BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon
BSC022N04LS6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC011N03L5SATMA1 | BSC022N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.47 | $0.66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 / StrongIRFET 30 V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | β |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | β |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | β |
| Power Dissipation (PD) @ Tc=25C | 96 W | β |
| Package | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | SuperSO8 5x6 (PG-TDSON-8-1) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +175 C (TJ) | -55 C to +175 C (junction) |
| Technology | OptiMOS 5 trench MOSFET | OptiMOSβ’ 6 (N-channel trench) |
| Gate Drive | Logic-level compatible | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Continuous Drain Current (ID) at Ta | β | 27 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Maximum Pulsed Drain Current (IDM) | β | 139 A |
| On-Resistance RDS(on) max | β | 2.2 mOhm at VGS=10 V |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 79 W |
| Channel Type | β | N-Channel |
| Pin Count | β | 8 |