ISC011N03L5SATMA1 vs BSC022N04LS6ATMA1 Perbandingan
Perbandingan bersamaan detil ISC011N03L5SATMA1 dari Infineon dan BSC022N04LS6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC011N03L5SATMA1 | BSC022N04LS6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 / StrongIRFET 30 V | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | — |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | — |
| Power Dissipation (PD) @ Tc=25C | 96 W | — |
| Paket | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | SuperSO8 5x6 (PG-TDSON-8-1) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55 C to +175 C (TJ) | -55 C to +175 C (junction) |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS™ 6 (N-channel trench) |
| Gate Drive | Logic-level compatible | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Continuous Drain Current (ID) at Ta | — | 27 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Pulsed Drain Current (IDM) | — | 139 A |
| On-Resistance RDS(on) max | — | 2.2 mOhm at VGS=10 V |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 79 W |
| Channel Type | — | N-Channel |
| Jumlah Pin | — | 8 |