ISC015N04NM5ATMA1 vs ISC058N04NM5ATMA1 Comparison

Detailed side-by-side comparison of ISC015N04NM5ATMA1 by Infineon and ISC058N04NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC015N04NM5ATMA1 ISC058N04NM5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 40V Normal Level —
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) —
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A —
Continuous Drain Current (ID) at Ta=25C 33 A —
Continuous Drain Current (ID) at Tc=25C 206 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 115 W —
Operating Temperature Range -55 C to +175 C (junction, per OptiMOS 5) -55C to +175C
Package / Case PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Mounting Type Surface Mount Surface Mount
Pin Count 8 —
RoHS Status Compliant —
MSL Level 1 (per Infineon SuperSO8 family) —
Drive Level Normal Level (VGS(th) ~3.4 V) —
Product Family — OptiMOS 5 40V Normal Level
Transistor Type — N-Channel MOSFET
Continuous Drain Current (ID, Tc=25C) — 63 A
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 42 W
Package — PG-TDSON-8 FL (SuperSO8 5x6 mm)
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

Datasheets & Resources

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