ISC015N04NM5ATMA1 vs ISC058N04NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N04NM5ATMA1 disebabkan oleh Infineon dan ISC058N04NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC015N04NM5ATMA1 ISC058N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 40V Normal Level —
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) —
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A —
Continuous Drain Current (ID) at Ta=25C 33 A —
Continuous Drain Current (ID) at Tc=25C 206 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 115 W —
Gambaran Suhu Operasi -55 C to +175 C (junction, per OptiMOS 5) -55C to +175C
Kemasan / Case PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Status RoHS Compliant —
Aras MSL 1 (per Infineon SuperSO8 family) —
Drive Level Normal Level (VGS(th) ~3.4 V) —
Product Family — OptiMOS 5 40V Normal Level
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc=25C) — 63 A
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 42 W
Kemasan — PG-TDSON-8 FL (SuperSO8 5x6 mm)
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

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