ISC016N08NM8ATMA1 vs ISC058N04NM5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC016N08NM8ATMA1 disebabkan oleh Infineon dan ISC058N04NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC016N08NM8ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | — |
| Pulsed Drain Current (IDM) at Tc | 268 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 263 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | 3.4 V |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Gambaran Suhu Operasi | -55 C to +150 C (junction) | -55C to +175C |
| Kemasan | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | OptiMOS 5 trench MOSFET |
| Status RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | — |
| Aras MSL | 1 (per JEDEC J-STD-020E classification for SuperSO8) | — |
| Product Family | — | OptiMOS 5 40V Normal Level |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 63 A |
| Continuous Drain Current (ID, Ta=25C) | — | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | — | 5.8 mOhm |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 42 W |
| RoHS Compliance | — | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | — | MSL per JEDEC J-STD-020 |
| Gate Drive Level | — | Normal Level (10V VGS recommended) |