ISC016N08NM8ATMA1 vs ISC058N04NM5ATMA1 Perbandingan
Perbandingan bersamaan detil ISC016N08NM8ATMA1 dari Infineon dan ISC058N04NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC016N08NM8ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | — |
| Pulsed Drain Current (IDM) at Tc | 268 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 263 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | 3.4 V |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | -55C to +175C |
| Paket | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | OptiMOS 5 trench MOSFET |
| Status RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | — |
| Level MSL | 1 (per JEDEC J-STD-020E classification for SuperSO8) | — |
| Product Family | — | OptiMOS 5 40V Normal Level |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 63 A |
| Continuous Drain Current (ID, Ta=25C) | — | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | — | 5.8 mOhm |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 42 W |
| RoHS Compliance | — | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | — | MSL per JEDEC J-STD-020 |
| Gate Drive Level | — | Normal Level (10V VGS recommended) |