ISC017N04NM5ATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of ISC017N04NM5ATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC017N04NM5ATMA1
ISC017N04NM5ATMA1 - 40V 1.7mΞ© N-Ch MOSFET | Infineon
ISC017N04NM5ATMA1 β Active
Specification Comparison
| Parameter | ISC017N04NM5ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TA=25C | 31 A | 33 A |
| Continuous Drain Current (ID) at TC=25C | 193 A | β |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 1.7 mOhm | β |
| Gate Threshold Voltage VGS(th) typ. | 3.4 V | β |
| Gate Charge Qg at VGS=10V | 67 nC | β |
| Input Capacitance Ciss at VDS=20V | 4800 pF | β |
| Power Dissipation at TA=25C | 3 W | β |
| Power Dissipation at TC=25C | 115 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| Operating Temperature Range | β | -55 C to +175 C |
| Technology | β | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | β | 1 |