ISC017N04NM5ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC017N04NM5ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC017N04NM5ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at TA=25C | 31 A | — |
| Continuous Drain Current (ID) at TC=25C | 193 A | — |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 1.7 mOhm | — |
| Gate Threshold Voltage VGS(th) typ. | 3.4 V | — |
| Gate Charge Qg at VGS=10V | 67 nC | — |
| Input Capacitance Ciss at VDS=20V | 4800 pF | — |
| Power Dissipation at TA=25C | 3 W | — |
| Power Dissipation at TC=25C | 115 W | — |
| Operating Junction Temperature | -55C to +175C | — |
| Package | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Continuous Drain Current (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Technology | — | OptiMOS 6 |
| Number of Pins | — | 8 |
| Channel Mode | — | Enhancement |
| Operating Temperature | — | -55 °C to +175 °C |