ISC017N04NM5ATMA1 vs ISC151N08NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC017N04NM5ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC017N04NM5ATMA1

ISC017N04NM5ATMA1 - 40V 1.7mΞ© N-Ch MOSFET | Infineon

ISC017N04NM5ATMA1 βœ“ Active
Infineon
ISC151N08NM6ATMA1

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC017N04NM5ATMA1 ISC151N08NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.78
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID) at TA=25C 31 A β€”
Continuous Drain Current (ID) at TC=25C 193 A β€”
On-Resistance RDS(on) at VGS=10V, ID=50A 1.7 mOhm β€”
Gate Threshold Voltage VGS(th) typ. 3.4 V β€”
Gate Charge Qg at VGS=10V 67 nC β€”
Input Capacitance Ciss at VDS=20V 4800 pF β€”
Power Dissipation at TA=25C 3 W β€”
Power Dissipation at TC=25C 115 W β€”
Operating Junction Temperature -55C to +175C β€”
Package PG-TDSON-8 FL (5x6 mm) PG-TDSON-8 FL
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (TA=25Β°C) β€” 9.2 A
Continuous Drain Current (TC=25Β°C) β€” 37 A
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 48 W
On-Resistance RDS(on) max β€” 15.1 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 3.5 V
Technology β€” OptiMOS 6
Number of Pins β€” 8
Channel Mode β€” Enhancement
Operating Temperature β€” -55 Β°C to +175 Β°C

Datasheets & Resources

Browse All Products Create BOM Request Quote