ISC017N04NM5ATMA1 vs ISC151N08NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC017N04NM5ATMA1 sa pamamagitan ng Infineon at ISC151N08NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | ISC017N04NM5ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at TA=25C | 31 A | — |
| Continuous Drain Current (ID) at TC=25C | 193 A | — |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 1.7 mOhm | — |
| Gate Threshold Voltage VGS(th) typ. | 3.4 V | — |
| Gate Charge Qg at VGS=10V | 67 nC | — |
| Input Capacitance Ciss at VDS=20V | 4800 pF | — |
| Power Dissipation at TA=25C | 3 W | — |
| Power Dissipation at TC=25C | 115 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Packhaging | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8 FL |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Patuloy na Drain Current (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Technology | — | OptiMOS 6 |
| Bilang ng Pins | — | 8 |
| Channel Mode | — | Enhancement |
| Temperature na Operasyon | — | -55 °C to +175 °C |