ISC019N08NM7ATMA1 vs BSC019N08NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC019N08NM7ATMA1 disebabkan oleh Infineon dan BSC019N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC019N08NM7ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | Trench MOSFET (OptiMOS 7) | OptiMOS 5 (N-channel trench) |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Drain Current (ID), TC=25°C | 209 A | — |
| Drain Current (ID), TA=25°C | 26 A | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 1.9 mΩ | — |
| Power Dissipation (PD), TC=25°C | 188 W | — |
| Power Dissipation (PD), TA=25°C | 3 W (6 cm² FR4) | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TDSON-8-43 (SuperSO8) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge QG | [DATA_NEEDED: QG] | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.0 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| Gambaran Suhu Operasi | — | -55 C to +150 C |
| Avalanche Rated | — | Yes |