ISC019N08NM7ATMA1 vs IQE050N08NM5CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC019N08NM7ATMA1 disebabkan oleh Infineon dan IQE050N08NM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC019N08NM7ATMA1 IQE050N08NM5CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 7 —
Jenis Transistor N-Channel MOSFET —
Technology Trench MOSFET (OptiMOS 7) OptiMOS 5 (Source-Down)
Drain-to-Source Voltage (VDS) 80 V —
Gate-to-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Drain Current (ID), TC=25°C 209 A —
Drain Current (ID), TA=25°C 26 A —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max] —
On-Resistance RDS(on) typ @ VGS=10V 1.9 mΩ —
Power Dissipation (PD), TC=25°C 188 W —
Power Dissipation (PD), TA=25°C 3 W (6 cm² FR4) —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-43 (SuperSO8) PG-TTFN-9-1 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Boson Bebas Yes —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Gate Threshold VGS(th) [DATA_NEEDED: VGS(th)] —
Total Gate Charge QG [DATA_NEEDED: QG] —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (Ta) — 16 A
Continuous Drain Current (Tc) — 101 A
On-Resistance RDS(on) Max — 5.0 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 100 W
Gate Threshold Vgs(th) Typ — [DATA_NEEDED: Vgs(th) typical value]
Suhu Operasi — -55°C to +175°C (TJ max)
Total Gate Charge Qg Typ — [DATA_NEEDED: total gate charge Qg typical]

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