ISC025N08NM5LF2ATMA1 vs IAUC60N04S6L030HATMA1 比較

詳細並排比較 ISC025N08NM5LF2ATMA1 由 Infineon 與 IAUC60N04S6L030HATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ 啟用中
Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ 啟用中

規格比較

參數 ISC025N08NM5LF2ATMA1 IAUC60N04S6L030HATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology MOSFET (Metal Oxide), OptiMOS 5 LF2 —
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) @ TA=25°C 23 A —
Continuous Drain Current (ID) @ TC=25°C 198 A —
On-Resistance (RDS(on)) Max 2.55 mΩ —
Gate-Source Threshold (VGS(th)) Max 3.9 V —
Total Gate Charge (Qg) Max 96 nC —
Power Dissipation @ TA 3 W —
Power Dissipation @ TC 217 W —
封裝 PG-TDSON-8 FL (Surface Mount) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
Polarity N-Channel —
RoHS 狀態 Compliant Compliant
Ordering Code Suffix ATMA1 (Tape & Reel, 13-inch) —
Manufacturer — Infineon Technologies
Part Series — OptiMOS 6
Configuration — Half-Bridge (2 N-Channel)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
工作接面溫度 — -55 C to +175 C
Automotive Qualification — AEC-Q101 (per part number suffix)
MSL 等級 — 1 (per JEDEC J-STD-020)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價