ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon
MPN: ISC025N08NM5LF2ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.77 | $2.77 |
| 10 | $2.49 | $24.90 |
| 100 | $2.21 | $221.00 |
| 500 | $1.96 | $980.00 |
| 1,000 | $1.74 | $1,740.00 |
ISC025N08NM5LF2ATMA1 Overview
A Linear FET (also called a logic-level, hot-swap, or SOA-optimized MOSFET) is a specific class of power MOSFET engineered with a larger die area and a wider safe operating area than standard trench MOSFETs, sacrificing some figure-of-merit to gain linear-region robustness. Within the power semiconductor taxonomy, this places the part as: MOSFET -> power MOSFET -> N-channel power MOSFET -> Linear FET (hot-swap class) -> Infineon OptiMOS 5 LF2 family. Linear FETs are widely used in telecom hot-swap controllers, server ORing, and battery protection where transient linear-mode operation occurs during plug-in or fault events.
Key features include 96 nC total gate charge, 3.9 V maximum gate-threshold voltage, and a strong 198 A continuous drain current rating that supports high inrush handling. The PG-TDSON-8 FL package offers an exposed thermal pad that drives a low junction-to-case thermal resistance, enabling 217 W power dissipation when mounted on a properly cooled PCB. The device is supplied on a 13-inch tape-and-reel carrier per the ATMA1 ordering code suffix.
The ISC025N08NM5LF2ATMA1 uses Infineon's OptiMOS 5 technology platform, which combines a trench-gate structure with field-plate optimization to balance RDS(on), gate charge, and avalanche ruggedness. Compared with conventional 80 V MOSFETs, the LF2 die has roughly 2-3x the active silicon area, which produces the wider SOA, lower RDS(on) of 2.55 mΩ, and a linear-mode operation capability for several milliseconds at high VDS.
Typical applications include 48 V telecom hot-swap controllers, server and data-center e-fuse circuits, battery management system (BMS) protection FETs, industrial DC load switches, and power distribution units (PDU) requiring high inrush handling. The wide SOA and 198 A continuous current make it well suited to 12 V/24 V/48 V bus architectures that must tolerate capacitive loads and short-circuit transients without the protection FET entering thermal runaway.
When designing with this part, pay close attention to the linear-mode power dissipation envelope - even a few milliseconds of operation in the saturation region can produce hundreds of watts. A gate-source pull-down resistor (typically 10 kΩ) and a controlled gate-drive slew rate are recommended to prevent inadvertent turn-on and to coordinate the SOA profile with the upstream hot-swap controller.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the ISC025N08NM5LF2ATMA1, complementing the manufacturer datasheet with cross-referenced engineering guidance not found in a single source.
Drop-in alternatives for ISC025N08NM5LF2ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC025N08NM5LF2ATMA1 (same form factor and footprint) — differing in Package, Technology, MSL Level, Operating Temperature Range, Gate Threshold Voltage (VGS(th)).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC028N03LF2SATMA1
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$0.86 / Unit
View Datasheet →ISC011N04NM7VATMA1
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$0.41 / Unit
View Datasheet →ISZ028N03LF2SATMA1
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →ISZ056N03LF2SATMA1
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →ISC015N06NM5ATMA1
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View Datasheet →IAUC60N04S6L030HATMA1
✅ Drop-In✓ In Stock
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View Datasheet →ISC025N08NM5LF2ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 LF2 |
| Drain-Source Voltage (VDS) Max | 80 V |
| Continuous Drain Current (ID) @ TA=25°C | 23 A |
| Continuous Drain Current (ID) @ TC=25°C | 198 A |
| On-Resistance (RDS(on)) Max | 2.55 mΩ |
| Gate-Source Threshold (VGS(th)) Max | 3.9 V |
| Total Gate Charge (Qg) Max | 96 nC |
| Power Dissipation @ TA | 3 W |
| Power Dissipation @ TC | 217 W |
| Package | PG-TDSON-8 FL (Surface Mount) |
| Mounting Type | Surface Mount |
| Polarity | N-Channel |
| RoHS Status | Compliant |
| Ordering Code Suffix | ATMA1 (Tape & Reel, 13-inch) |
ISC025N08NM5LF2ATMA1 Pin Configuration
| Pin 1 | GATE — Gate control input; drive with 10V for full enhancement |
| Pin 2 | DRAIN — Drain connection (high current path) |
| Pin 3 | DRAIN — Drain connection (high current path) |
| Pin 4 | DRAIN — Drain connection (high current path) |
| Pin 5 | DRAIN — Drain connection (high current path) |
| Pin 6 | DRAIN — Drain connection (high current path) |
| Pin 7 | DRAIN — Drain connection (high current path) |
| Pin 8 | SOURCE — Source connection |
Safe Operating Area (DC)
Typical Applications
ISC025N08NM5LF2ATMA1 is suitable for 6 applications: 48 V Telecom Hot-Swap Controller, Server & Data-Center eFuse Circuit, Battery Management System (BMS) Protection FET, Industrial DC Load Switch, Power Distribution Unit (PDU) Output Switch, Automotive 48 V Mild-Hybrid eFuse.
48 V Telecom Hot-Swap Controller
The ISC025N08NM5LF2ATMA1 is ideal for 48 V telecom hot-swap controllers where it must pass large inrush currents into bulk capacitors without entering thermal runaway. The part's 80 V VDS rating provides 32 V of headroom above the nominal 48 V rail, while the 2.55 mΩ RDS(on) minimizes steady-state conduction loss. The wide SOA allows linear-mode operation for 1-10 ms during plug-in events, absorbing the inrush energy that would destroy a standard 80 V trench MOSFET. Used with hot-swap controllers like the LTC4215 or TPS2490, it enables >100 A continuous throughput on 48 V distribution rails.
Recommended
Server & Data-Center eFuse Circuit
In server and data-center e-fuse circuits, the ISC025N08NM5LF2ATMA1 serves as the main protection FET that isolates faulty loads during short-circuit events. The 198 A continuous drain current supports 12 V/48 V rails up to several kW, while the 2.55 mΩ RDS(on) keeps conduction loss below 1% at full load. The wide SOA handles the linear-mode dissipation during current-limit foldback, which can last several milliseconds as the e-fuse controller regulates fault current. The PG-TDSON-8 FL exposed pad provides 217 W power dissipation capability with proper PCB thermal design.
Recommended
Battery Management System (BMS) Protection FET
The ISC025N08NM5LF2ATMA1 is widely deployed as the high-side or low-side protection FET in 12 V/24 V/48 V battery management systems, where it must conduct continuous charge/discharge currents and disconnect the battery during fault conditions. The 198 A continuous rating supports high-C-rate lithium battery packs, and the 2.55 mΩ RDS(on) minimizes voltage drop during discharge. The wide SOA allows safe operation during short-circuit protection events when the BMS controller momentarily operates the FET in the linear region. The 80 V rating provides headroom for inductive transients from motors or inverters.
Recommended
Industrial DC Load Switch
The ISC025N08NM5LF2ATMA1 is well suited to industrial 24 V/48 V DC load switches that must handle high inrush currents from motors, solenoids, and capacitive loads. The 198 A continuous current rating and 80 V VDS support industrial automation applications, while the 2.55 mΩ RDS(on) reduces heat dissipation in continuous-duty switching. The wide SOA protects the FET during inrush on large capacitive loads, where the FET operates in the linear region for several milliseconds. The PG-TDSON-8 FL package enables compact PCB designs with efficient top-side cooling.
Recommended
Power Distribution Unit (PDU) Output Switch
The ISC025N08NM5LF2ATMA1 is used in PDU output switches and intelligent power strips where it must route high current to server and networking equipment with inrush protection. The 198 A continuous current supports 12 V/48 V distribution up to several kW per channel, and the 2.55 mΩ RDS(on) minimizes voltage drop. The wide SOA handles plug-in transients when hot-swapping equipment into live PDU outlets. The PG-TDSON-8 FL surface-mount package enables high-density PDU designs with automated assembly.
Recommended
Automotive 48 V Mild-Hybrid eFuse
The ISC025N08NM5LF2ATMA1 is used in 48 V mild-hybrid automotive e-fuse applications where it protects the 48 V bus from short-circuit faults. The 80 V VDS rating provides headroom for load-dump transients on 48 V automotive rails, and the 198 A continuous current supports high-power 48 V loads. The 2.55 mΩ RDS(on) minimizes conduction loss in continuous operation, while the wide SOA handles linear-mode operation during fault current limiting. For AEC-Q100 qualified automotive applications, consult the Infineon automotive-grade portfolio.
Recommended
Recommended Products Summary
Engineering reference data for ISC025N08NM5LF2ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC028N03LF2SATMA1 | ISC011N04NM7VATMA1 | ISZ028N03LF2SATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL | PG-TDSON-8 FL | PG-TDSON-8 FL | PG-TDSON-8 FL |
| Drain-Source Voltage (VDS) Max | 80 V | 30 V | 40 V | 30 V | 30 V |
| On-Resistance (RDS(on)) Max | 2.55 mΩ | 2.8 mΩ | 1.1 mΩ | 2.8 mΩ | 5.6 mΩ |
| Technology / Family | OptiMOS 5 LF2 (Linear FET) | OptiMOS 5 LF2 (Linear FET) | OptiMOS 7 (Linear FET) | OptiMOS 5 LF2 (Linear FET) | OptiMOS 5 LF2 (Linear FET) |
| Primary Application | 48 V hot-swap, eFuse, BMS | 12 V hot-swap, eFuse | 12 V server, eFuse | 12 V hot-swap, eFuse | 12 V hot-swap, low-power |
Key Differentiators
- Higher voltage rating (80 V) for 48 V telecom rails (vs ISC011N04NM7VATMA1)
- Ultra-low 2.55 mΩ RDS(on) for minimal conduction loss (vs ISC028N03LF2SATMA1)
- Wide SOA for linear-mode hot-swap operation (vs BSC076N04NDATMA1)
Design Notes
The PG-TDSON-8 FL package achieves 217 W power dissipation at TC=25°C, but this requires substantial PCB thermal management. Use at least 4 oz copper on the drain pad, multiple thermal vias to internal ground planes, and consider a top-side copper pour. For continuous operation above 50 A, forced air cooling is recommended. Always derate the maximum current based on actual measured case temperature, not ambient.
A 10 kΩ gate-source pull-down resistor is required to prevent inadvertent turn-on from dV/dt-induced gate charge. The gate drive voltage should reach 10 V for full enhancement and minimum RDS(on); driving at 4.5 V (logic level) increases RDS(on) by 50% or more. For hot-swap applications, use a controlled gate slew rate via the controller to coordinate inrush with the SOA curve, and verify the linear-mode power envelope (VDS × ID × time) does not exceed the SOA graph.
Place the MOSFET as close as possible to the hot-swap controller to minimize gate-drive loop inductance. The high-current drain path should use wide copper pours on multiple layers, with the source connection to the controller's sense resistor kept short to avoid parasitic inductance. The exposed thermal pad must be soldered to a sufficiently large copper area for heat dissipation - 100 mm² minimum on top layer plus thermal vias to internal planes is recommended for 100+ A continuous operation.
Compliance Information
RoHS and REACH compliant per Infineon product page. ATMA1 suffix indicates lead-free, tape-and-reel packaging. AEC-Q100 status not specified - for automotive applications, consult Infineon automotive-grade portfolio.
