ISC033N03LF2SATMA1 - 30V 108A N-Channel MOSFET | Infineon
MPN: ISC033N03LF2SATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
| 5,000 | $0.81 | $4,050.00 |
ISC033N03LF2SATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch in which applying a gate-source voltage above the threshold (here, typically 2.35 V max) creates a conductive inversion layer between drain and source. N-channel devices such as this one are the workhorses of low-voltage power conversion, sitting in the hierarchy discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> OptiMOS, and they dominate synchronous buck converters, hot-swap controllers, battery protection and load switches because of their very low conduction loss and fast switching speed.
The headline electrical specifications are 30 V VDS, 108 A ID at TC, 3.3 mOhm maximum RDS(on) at VGS = 10 V, and 71 W power dissipation at TC. The source-down package forces the source connection to the large thermal pad so heat can be sunk directly into the PCB copper, enabling sustained 108 A operation when the board itself is used as the heatsink. The device is rated for 3 W dissipation in free air, which falls to the PCB copper area in real layouts.
Typical applications for this part include synchronous rectification on the secondary side of isolated DC-DC converters, OR-ing FETs in redundant 12 V or 24 V telecom/server rails, hot-swap controllers in plug-in modules, motor-drive low-side switches, and high-current point-of-load converters in servers and datacenters. The very low on-resistance minimises conduction loss at high current, which directly improves efficiency and thermal headroom.
When designing with this part, keep the gate-drive loop area as small as possible, source a 10 V gate from a dedicated gate driver, and provide a robust 1 microfarad VDS snubber if the part is used in hard-switched topologies. For very-high-current paths, parallel multiple ISC033N03LF2SATMA1 devices with separate gate resistors to balance dynamic current sharing. This page synthesises distributor pricing, parametric proximity to Infineon same-family parts and cross-brand drop-in candidates, plus practical layout guidance not found in the Infineon datasheet alone.
Drop-in alternatives for ISC033N03LF2SATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC033N03LF2SATMA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC028N03LF2SATMA1
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View Datasheet →ISC011N04NM7VATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.62 / Unit
View Datasheet →ISC045N03L5SATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.51 / Unit
View Datasheet →ISC151N08NM6ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.78 / Unit
View Datasheet →ISC033N03LF2SATMA1-VB
✅ Drop-In📋 Reference alternative (not in catalog)
BSC076N04NDATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.82 / Unit
View Datasheet →ISC033N03LF2SATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| MPN | ISC033N03LF2SATMA1 |
| Part Family | OptiMOS LF2 (<= 40V) |
| Transistor Type | N-Channel MOSFET |
| Technology | OptiMOS trench (<= 40V) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TC | 108 A |
| Continuous Drain Current (ID) at TA | 22 A |
| Maximum On-Resistance RDS(on) max | 3.3 mOhm at VGS = 10 V |
| Gate Threshold Voltage VGS(th) typ | 2.35 V |
| Power Dissipation (PD) at TA | 3 W |
| Power Dissipation (PD) at TC | 71 W |
| Package | PG-TDSON-8-62 (Source-Down, 5x6 mm) |
| Mounting Type | Surface Mount |
| Configuration | Single N-channel, source-down |
| RoHS Status | Compliant |
ISC033N03LF2SATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (10 V VGS recommended for full RDS(on)) |
| Pin 2 | Drain — Drain connection (also bonded to exposed pad) |
| Pin 3 | Drain — Drain connection (also bonded to exposed pad) |
| Pin 4 | Drain — Drain connection (also bonded to exposed pad) |
| Pin 5 | Drain — Drain connection (also bonded to exposed pad) |
| Pin 6 | Drain — Drain connection (also bonded to exposed pad) |
| Pin 7 | Drain — Drain connection (also bonded to exposed pad) |
| Pin 8 | Source — Source connection (also bonded to exposed bottom pad - source-down package) |
ISC033N03LF2SATMA1 Safe Operating Area (DC, TJ=25 C)
Typical Applications
ISC033N03LF2SATMA1 is suitable for 7 applications: Synchronous Rectification in 12V DC-DC Converters, OR-ing FET for Redundant 24V/48V Telecom Rails, Hot-Swap / Inrush Controller Switch, Battery Protection in 4S-7S Li-Ion Packs, Motor Drive Low-Side / Half-Bridge Switch, High-Current Point-of-Load (POL) in Servers, USB-PD / High-Current Load Switch.
Synchronous Rectification in 12V DC-DC Converters
The ISC033N03LF2SATMA1 fits 12 V synchronous rectification because its 30 V VDS gives comfortable margin against 12 V rail plus transients, while the 3.3 mOhm RDS(on) at 10 V VGS minimises conduction loss on the low-side switch in buck or forward converters. At 50 A load the part dissipates only I-squared-R = 50 x 50 x 0.0033 = 8.25 W, which the source-down PG-TDSON-8-62 pad can dump directly into the PCB copper. Designers place the part on the secondary side of an isolated brick, drive the gate with a 10 V gate-driver IC, and add a small RC snubber across the drain-source to control ringing. The result is high-efficiency (>96% target) isolated DC-DC stages for server and telecom power.
Recommended
OR-ing FET for Redundant 24V/48V Telecom Rails
ISC033N03LF2SATMA1 works as an OR-ing FET on redundant -48 V telecom return or 24 V industrial rails because its 30 V VDS easily handles the bus voltage and its low 3.3 mOhm RDS(on) minimises voltage drop and heat between parallel power supplies. The source-down package lets the OR-ing FET sit on a continuous copper pour that doubles as a heat-spreader in the equipment shelf. Place a hot-swap controller IC nearby to manage inrush current and gate ramp; the body diode's reverse recovery characteristics also make the part suitable for battery-backup OR-ing. Compared to a Schottky diode, the FET saves several watts per rail at 30 A load.
Recommended
Hot-Swap / Inrush Controller Switch
In a hot-swap or inrush-limiting role, the ISC033N03LF2SATMA1 acts as the main pass element between a live backplane (12 V to 24 V) and a plug-in board. Its 108 A TC-rated continuous current handles the full load after insertion, while its low RDS(on) keeps the drop under 50 mV at 15 A, leaving more voltage headroom for the load. A dedicated hot-swap controller ramps the gate from 0 V to 10 V over a few milliseconds to limit inrush into the bulk capacitance. The PG-TDSON-8-62 source-down layout gives excellent thermal coupling so that sustained current does not require a heatsink, just ample PCB copper.
Recommended
Battery Protection in 4S-7S Li-Ion Packs
ISC033N03LF2SATMA1 fits 4S to 7S lithium-ion battery protection boards where the maximum cell-pack voltage is 7 x 4.2 V = 29.4 V - exactly within the 30 V VDS rating. Its low 3.3 mOhm RDS(on) minimises voltage drop on the discharge path at high current, extending pack capacity at high discharge rates (e.g. e-bike, power-tool, drone packs). Place two ISC033N03LF2SATMA1 in back-to-back configuration to block charge and discharge independently, or use one with a separate charge FET. The 71 W TC power dissipation gives plenty of margin for transient short-circuit events that the protection IC must clear in microseconds.
Recommended
Motor Drive Low-Side / Half-Bridge Switch
ISC033N03LF2SATMA1 is well-suited as the low-side switch in small BLDC or brushed-DC motor drives up to 30 V pack voltage. The 108 A peak rating handles motor inrush and stall currents; the 3.3 mOhm RDS(on) keeps conduction loss low for sustained torque output. Pair the part with a complementary high-side P-channel or N-channel MOSFET, drive both gates from a half-bridge driver such as the IR2304SPBF or 2EDR8258XXUMA1, and place a small bootstrap capacitor for the high-side. The PG-TDSON-8-62 package's source-down pad also provides good thermal mass for repetitive pulse currents during PWM commutation.
Recommended
High-Current Point-of-Load (POL) in Servers
In server point-of-load converters stepping 12 V down to 1 V or 0.8 V at 60-80 A, the ISC033N03LF2SATMA1 makes an excellent synchronous buck low-side FET. Its 30 V VDS easily handles the 12 V input plus ringing, and the 3.3 mOhm RDS(on) at 10 V VGS keeps conduction loss to about 5 W at 40 A (40 x 40 x 0.0033). The source-down PG-TDSON-8-62 pad couples directly into the PCB ground plane, which doubles as a heat-spreader under forced airflow. Place the part adjacent to the high-side FET with a tight gate-drive loop to minimise switching loss, and use a multi-phase digital controller for current sharing.
Recommended
USB-PD / High-Current Load Switch
ISC033N03LF2SATMA1 fits as a load switch or e-fuse element in 20 V USB-PD power paths and other high-current load-management circuits. The 30 V VDS safely contains the USB-PD 20 V maximum plus inductive ringing from the cable, while the 3.3 mOhm RDS(on) keeps voltage drop under 100 mV at 30 A continuous. Drive the gate from a smart high-side switch controller such as the BTS710336ESAXUMA1 for over-current protection; the part's low Rds(on) also minimises self-heating during sustained loads. The PG-TDSON-8-62 source-down layout fits cleanly beneath the Type-C connector footprint for compact designs.
Recommended
Recommended Products Summary
Engineering reference data for ISC033N03LF2SATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC028N03LF2SATMA1 | ISC011N04NM7VATMA1 | ISC015N06NM5ATMA1 | ISC045N03L5SATMA1 | ISC033N03LF2SATMA1-VB |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-62 (Source-Down, 5x6 mm) | PG-TDSON-8-62 (Source-Down) - same | PG-TDSON-8-62 (Source-Down) - same | PG-TDSON-8-62 (Source-Down) - same | PG-TDSON-8-62 (Source-Down) - same | DFN8 (5x6) - same footprint, cross-brand |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| VDS max | 30 V | 30 V | 40 V | 60 V | 30 V | 30 V |
| RDS(on) max at 10V VGS | 3.3 mOhm | ~2.8 mOhm | ~1.1 mOhm | ~1.5 mOhm | ~4.5 mOhm | ~3.0 mOhm |
| Continuous Drain Current (ID) at TC | 108 A | ~120 A | ~200 A | ~180 A | ~80 A | 120 A |
| Technology Family | OptiMOS LF2 (<=40V) | OptiMOS LF2 (<=40V) | OptiMOS 5 40V | OptiMOS 5 60V | OptiMOS 5 30V | Trench (cross-brand VBsemi) |
| Source-Down Pinout | Yes (PG-TDSON-8-62) | Yes (same) | Yes (same) | Yes (same) | Yes (same) | Yes (per VBsemi datasheet) |
Key Differentiators
- Source-down package simplifies thermal design and gate-drive return (vs ISC151N08NM6ATMA1 (higher-VDS 80 V variant))
- Lowest 30 V RDS(on) in Infineon LF2 family at sub-40 V (vs ISC045N03L5SATMA1 (other 30 V LF2 sibling))
- Plug-compatible with multiple Infineon OptiMOS siblings for design reuse (vs BSC076N04NDATMA1 (40 V OptiMOS))
Design Notes
Estimated: at 50 A continuous with 3.3 mOhm RDS(on), conduction loss is approximately I-squared-R = 50 x 50 x 0.0033 = 8.25 W. The PG-TDSON-8-62 source-down package routes heat out the source pad into the PCB copper, so on a JEDEC EIA/JESD51 1-square-inch 2 oz copper pour the part typically sustains 20-30 A in free air without a heatsink. For sustained 50-100 A loads, expand the PCB copper area to at least 4 square inches or attach a small heatsink on the opposite side of the board. The 71 W TC rating only applies if the case temperature is actively held at 25 C.
Source-down packages simplify the gate-drive return path: keep the gate-driver IC within 5 mm of the gate pad and place the gate pull-down resistor (10-100 kOhm) right at the IC pin to prevent Miller-induced turn-on. The drain pad (pins 2-7 plus exposed pad) must be flooded with copper and have at least 4 thermal vias (0.3 mm drill, 1 mm pitch) to inner copper layers. Estimate: every additional 1 oz copper square inch lowers junction-to-ambient thermal resistance by roughly 5 C/W.
Do not gate ISC033N03LF2SATMA1 directly from a microcontroller 3.3 V GPIO - the gate threshold is 2.35 V typ but full RDS(on) requires 10 V VGS to hit 3.3 mOhm; at 4.5 V VGS the RDS(on) is several times higher and the part will overheat at high current. Always use a dedicated gate driver (e.g., 1ED3127MU12FXUMA1 or IR2010STRPBF) capable of sourcing 1-2 A peak to switch the Ciss quickly. In hard-switched topologies add an RC snubber (e.g., 10 ohm + 1 nF) across drain-source to limit VDS overshoot below 30 V.
Compliance Information
RoHS and REACH compliance per Infineon product page (confirmed by DigiKey listing). Not AEC-Q100 qualified - this is a standard industrial/commercial part; for automotive grade look at the ISC033N03LF2SATMA1 automotive part number suffix. Lead-free reflow profile per JEDEC J-STD-020.
