ISC052N03LF2SATMA1 vs ISZ056N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC052N03LF2SATMA1 by Infineon and ISZ056N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC052N03LF2SATMA1
ISC052N03LF2SATMA1 - 30V N-Ch 74A OptiMOS 5 MOSFET | Infineon
ISC052N03LF2SATMA1 β ActiveInfineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC052N03LF2SATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.35 | $0.49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 30V | StrongIRFET 2 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | 18 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 74 A | β |
| On-Resistance RDS(on) max at VGS=10V | 5.2 mΞ© | β |
| Power Dissipation (PD) at TA=25Β°C | 3 W | β |
| Power Dissipation (PD) at TC=25Β°C | 52 W | β |
| Package | PG-TDSON-8-62 (TDSON EP) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C | -55 C to +175 C |
| Technology | Trench MOSFET (OptiMOS 5) | β |
| Polarity | N-Channel | β |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Continuous Drain Current (ID) at Ta | β | 16 A |
| Continuous Drain Current (ID) at Tc | β | 72 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | β | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | β | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 52 W |