ISC052N03LF2SATMA1 vs ISZ056N03LF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC052N03LF2SATMA1 disebabkan oleh Infineon dan ISZ056N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC052N03LF2SATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 30V | StrongIRFET 2 |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 74 A | — |
| On-Resistance RDS(on) max at VGS=10V | 5.2 mΩ | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 52 W | — |
| Kemasan | PG-TDSON-8-62 (TDSON EP) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55°C to +150°C | -55 C to +175 C |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| Polarity | N-Channel | — |
| Kiraan Pin | 8 | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |