ISC058N04NM5ATMA1 vs BSC040N08NS5ATMA1 Comparison

Detailed side-by-side comparison of ISC058N04NM5ATMA1 by Infineon and BSC040N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC058N04NM5ATMA1 BSC040N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V Normal Level —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID, Tc=25C) 63 A 100 A
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 42 W —
Package PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (N-channel trench MOSFET)
Operating Temperature Range -55C to +175C —
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
Part Number — BSC040N08NS5ATMA1
Maximum Drain Current (ID, Tc=25C, package-limited) — 121 A
On-Resistance (RDS(on) max, VGS=10V) — 4 mOhm
Power Dissipation (Ta=25C, 1in² PCB) — 2.5 W
Power Dissipation (Tc=25C) — 104 W
Operating Junction Temperature — -55 C to +175 C
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
RoHS Status — Compliant
MSL Level — 1
Primary Application — Synchronous rectification in telecom and server power supplies

Datasheets & Resources

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