ISC058N04NM5ATMA1 vs BSC040N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil ISC058N04NM5ATMA1 dari Infineon dan BSC040N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC058N04NM5ATMA1 BSC040N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V Normal Level —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID, Tc=25C) 63 A 100 A
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 42 W —
Paket PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (N-channel trench MOSFET)
Rentang Suhu Kerja -55C to +175C —
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
Part Number — BSC040N08NS5ATMA1
Maximum Drain Current (ID, Tc=25C, package-limited) — 121 A
On-Resistance (RDS(on) max, VGS=10V) — 4 mOhm
Power Dissipation (Ta=25C, 1in² PCB) — 2.5 W
Power Dissipation (Tc=25C) — 104 W
Suhu Hubung Kerja — -55 C to +175 C
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Status RoHS — Compliant
Level MSL — 1
Primary Application — Synchronous rectification in telecom and server power supplies

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon