ISC058N04NM5ATMA1 vs BSC040N08NS5ATMA1 比較
詳細並排比較 ISC058N04NM5ATMA1 由 Infineon 與 BSC040N08NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC058N04NM5ATMA1 | BSC040N08NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V Normal Level | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID, Tc=25C) | 63 A | 100 A |
| Continuous Drain Current (ID, Ta=25C) | 17 A | — |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | — |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 42 W | — |
| 封裝 | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| 工作溫度範圍 | -55C to +175C | — |
| RoHS Compliance | RoHS Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | — |
| Gate Drive Level | Normal Level (10V VGS recommended) | — |
| Part Number | — | BSC040N08NS5ATMA1 |
| Maximum Drain Current (ID, Tc=25C, package-limited) | — | 121 A |
| On-Resistance (RDS(on) max, VGS=10V) | — | 4 mOhm |
| Power Dissipation (Ta=25C, 1in² PCB) | — | 2.5 W |
| Power Dissipation (Tc=25C) | — | 104 W |
| 工作接面溫度 | — | -55 C to +175 C |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | 1 |
| Primary Application | — | Synchronous rectification in telecom and server power supplies |