ISC080N10NM6ATMA1 vs BSC023N08NS5SCATMA1 Comparison
Detailed side-by-side comparison of ISC080N10NM6ATMA1 by Infineon and BSC023N08NS5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 β ActiveInfineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΞ© OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 β ActiveSpecification Comparison
| Parameter | ISC080N10NM6ATMA1 | BSC023N08NS5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 6 100V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 100 V | β |
| Continuous Drain Current (ID) at Ta | 13 A | β |
| Continuous Drain Current (ID) at Tc | 75 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 100 W | β |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 Β΅A | β |
| Package | PG-TDSON-8 FL (TDSON EP) | PG-WSON-8-2 (SuperSO8 DSC) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ max, per datasheet) | β |
| MSL Level | 1 (per JEDEC J-STD-020, per datasheet) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | β |
| Part Number | β | BSC023N08NS5SCATMA1 |
| Technology | β | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 202 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 188 W |
| On-State Resistance RDS(on) typ. | β | 2.3 mΞ© at VGS=10 V, ID=50 A |
| Gate Threshold Voltage VGS(th) typ. | β | 3.8 V |
| Total Gate Charge Qg | β | 98 nC at VGS=10 V |
| Input Capacitance Ciss | β | 6.8 nF |
| Output Capacitance Coss | β | 74 pF |
| Thermal Resistance RthJC | β | 0.72 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |