ISC080N10NM6ATMA1 vs IAUCN04S6N009TATMA1 Perbandingan

Perbandingan bersamaan detil ISC080N10NM6ATMA1 dari Infineon dan IAUCN04S6N009TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC080N10NM6ATMA1 IAUCN04S6N009TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Ta 13 A —
Continuous Drain Current (ID) at Tc 75 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 100 W —
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA —
Paket PG-TDSON-8 FL (TDSON EP) PG-LHDSO-10-2 (SSO10T)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55°C to +175°C (TJ max, per datasheet) —
Level MSL 1 (per JEDEC J-STD-020, per datasheet) —
Status RoHS Compliant —
Lead-Free Yes —
Bebas Halogen Yes —
Qualification Industrial grade (per Infineon OptiMOS 6 100V family) —
Part Family — OptiMOS 6 40 V
Part Number — IAUCN04S6N009T
Ordering Code (MPN) — IAUCN04S6N009TATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, at Tj) — 330 A
Power Dissipation (PD, at Tc) — 178 W
On-Resistance RDS(on) max — 0.9 mΩ
Technology — OptiMOS 6 trench MOSFET
Automotive Qualification — AEC-Q101
Lead-Free / RoHS — Yes / Compliant
Gate Threshold VGS(th) typ — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg typ — [DATA_NEEDED: total gate charge]

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