ISC080N10NM6ATMA1 vs IAUCN04S6N009TATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC080N10NM6ATMA1 disebabkan oleh Infineon dan IAUCN04S6N009TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC080N10NM6ATMA1 IAUCN04S6N009TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Ta 13 A —
Continuous Drain Current (ID) at Tc 75 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 100 W —
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA —
Kemasan PG-TDSON-8 FL (TDSON EP) PG-LHDSO-10-2 (SSO10T)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (TJ max, per datasheet) —
Aras MSL 1 (per JEDEC J-STD-020, per datasheet) —
Status RoHS Compliant —
Lead-Free Yes —
Boson Bebas Yes —
Qualification Industrial grade (per Infineon OptiMOS 6 100V family) —
Part Family — OptiMOS 6 40 V
Part Number — IAUCN04S6N009T
Ordering Code (MPN) — IAUCN04S6N009TATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, at Tj) — 330 A
Power Dissipation (PD, at Tc) — 178 W
On-Resistance RDS(on) max — 0.9 mΩ
Technology — OptiMOS 6 trench MOSFET
Automotive Qualification — AEC-Q101
Lead-Free / RoHS — Yes / Compliant
Gate Threshold VGS(th) typ — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg typ — [DATA_NEEDED: total gate charge]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga