ISC240P06LMATMA1 vs ISC045N03L5SATMA1 Comparison

Detailed side-by-side comparison of ISC240P06LMATMA1 by Infineon and ISC045N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC240P06LMATMA1

ISC240P06LMATMA1 - 60V P-Channel OptiMOS MOSFET | Infineon

ISC240P06LMATMA1 βœ“ Active

Specification Comparison

Parameter ISC240P06LMATMA1 ISC045N03L5SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.99 $0.51
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -60 V 30 V
Continuous Drain Current (ID, Tc) -59 A β€”
On-Resistance RDS(on) max @ VGS=-10V 24 mΞ© β€”
Power Dissipation (Ta) 188 W β€”
Technology OptiMOS trench OptiMOS 5 / Trench
Package PG-TDSON-8 FL (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-6)
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] β€”
Total Gate Charge Qg typ [DATA_NEEDED: Qg typical value] β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
Avalanche Rated Yes (single-pulse) β€”
Lead-Free / RoHS Yes (per Infineon product page) β€”
REACH Compliance Compliant β€”
Manufacturer β€” Infineon Technologies
Part Number β€” ISC045N03L5SATMA1
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at TA=25Β°C β€” 18 A
Continuous Drain Current (ID) at TC=25Β°C β€” 63 A
On-Resistance RDS(on) max @ VGS=10V β€” 4.5 mΞ©
Gate-Source Threshold Voltage (VGS(th)) β€” 2 V @ ID=250 Β΅A
Gate-Source Voltage (VGS) max β€” Β±20 V
Total Gate Charge (Qg) β€” 13 nC @ VGS=10 V
Input Capacitance (Ciss) β€” 870 pF @ VDS=15 V
Power Dissipation (PD) at TA=25Β°C β€” 2.5 W
Power Dissipation (PD) at TC=25Β°C β€” 30 W
Operating Temperature Range β€” -55 Β°C to +150 Β°C
RoHS Status β€” Compliant

Datasheets & Resources

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