ISC240P06LMATMA1 - 60V P-Channel OptiMOS MOSFET | Infineon
MPN: ISC240P06LMATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.99 | $990.00 |
ISC240P06LMATMA1 Overview
A P-channel MOSFET is a minority-carrier enhancement-mode field-effect transistor in which the source is tied to the more positive rail and the channel conducts when the gate is pulled below the source by roughly 10 V. P-channel parts belong to the MOSFET -> discrete semiconductor -> power-switch transistor hierarchy, and they complement N-channel MOSFETs in half-bridge and high-side switch topologies where driving an N-channel above the input rail would otherwise require a bootstrap or charge-pump circuit. By selecting a P-channel for the high side, the gate-drive requirement is simplified to a ground-referenced logic signal, reducing overall BOM cost and PCB area.
Key parametric features include a low typical gate charge (Qg) consistent with the OptiMOS P-channel 60 V family, logic-level compatible VGS(th), avalanche-rated single-pulse robustness, and an exposed die-attach pad (FL = flip-chip leadless) that delivers a junction-to-case thermal resistance compatible with 188 W class dissipation when properly soldered to a multi-layer copper PCB. The device is rated for operation across the -55 °C to +175 °C junction temperature range and is qualified to JEDEC moisture sensitivity level 1.
In typical application circuits the ISC240P06LMATMA1 is wired source-to-rail with the drain feeding the load, and the gate is driven by a low-side gate driver or microcontroller GPIO that swings between 0 V and VCC. Because conduction loss scales with I²×RDS(on), the 24 mΩ maximum on-resistance enables efficient switching at currents up to ~30 A continuous without aggressive thermal management.
When designing with this part, observe Infineon's PCB layout recommendations: stitch the FL exposed pad to a continuous copper pour on the top and inner layers with at least 6 thermal vias, and ensure the source Kelvin connection is used for accurate current sensing. Use a 10 kΩ gate-to-source pull-up resistor to hold the switch off during MCU reset. Compared with N-channel equivalents, the trade-off is approximately 2× higher RDS(on) for the same silicon area and a tighter safe operating area at high VDS.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical PCB thermal design notes not consolidated on any single manufacturer or distributor page.
Drop-in alternatives for ISC240P06LMATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC240P06LMATMA1 (same form factor and footprint) — differing in Technology, Drain-Source Voltage (VDS), FET Type, Operating Junction Temperature, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB110P06LMATMA1
✅ Drop-In✓ In Stock
$1.31 / Unit
View Datasheet →ISC045N03L5SATMA1
✅ Drop-In✓ In Stock
$0.51 / Unit
View Datasheet →BSC076N04NDATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →ISC240P06LMATMA1 Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID, Tc) | -59 A |
| On-Resistance RDS(on) max @ VGS=-10V | 24 mΩ |
| Power Dissipation (Ta) | 188 W |
| Technology | OptiMOS trench |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Operating Junction Temperature | -55 °C to +175 °C |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (single-pulse) |
| Lead-Free / RoHS | Yes (per Infineon product page) |
| REACH Compliance | Compliant |
ISC240P06LMATMA1 Pin Configuration
| Pin 1 | S — Source (connected to +V supply rail) |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate (driven 0 V to -VGS for ON) |
| Pin 5 | D — Drain (load connection) |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
| Pin 9 | D (EP) — Drain tab / exposed thermal pad - electrically drain, primary thermal path |
Safe Operating Area (DC, TC = 25 °C)
Typical Applications
ISC240P06LMATMA1 is suitable for 6 applications: Automotive 12 V High-Side Load Switch, Industrial 24 V Solenoid and Valve Driver, USB Power Delivery and Battery Isolation Switch, Hot-Swap and In-Rush Current Limiter, LED Driver High-Side Switch, Motor Drive Half-Bridge (Low-Side Coordination).
Automotive 12 V High-Side Load Switch
The ISC240P06LMATMA1's -60 V VDS rating provides >5× design margin over a 12 V automotive bus, tolerating load-dump transients up to 35 V without avalanche breakdown. With RDS(on) max of 24 mΩ at VGS = -10 V, conduction loss at 10 A is roughly 2.4 W - manageable without a heatsink when the FL exposed pad is soldered to a 6 cm² copper pour. The P-channel topology eliminates the bootstrap capacitor required by an N-channel equivalent, simplifying ECU layouts for body-control modules, lighting drivers and seat-control relays where 10-30 A switching is routine.
Recommended
Industrial 24 V Solenoid and Valve Driver
At a 24 V industrial supply rail, the ISC240P06LMATMA1's 60 V VDS rating gives >2× margin over the worst-case 36 V transient envelope, while its 59 A continuous ID rating comfortably handles the inrush of solenoid coils and proportional valves (typical 5-15 A hold, 30-40 A inrush). The PG-TDSON-8 FL package delivers <1 °C/W RthJC when soldered to inner-layer copper, supporting 188 W dissipation pulses during inductive turn-off. Place a TVS or free-wheeling diode across inductive loads to clamp the kick-back within the 60 V rating.
Recommended
USB Power Delivery and Battery Isolation Switch
In USB-PD and battery-pack designs, the ISC240P06LMATMA1 acts as a reverse-polarity and over-current isolation FET between the pack and the system rail. The 24 mΩ RDS(on) at VGS = -10 V keeps full-load voltage drop below 100 mV at 5 A, while the P-channel gate can be driven directly from an MCU GPIO without a charge pump. The -55 °C to +175 °C junction rating covers automotive temperature-class 2, and JEDEC MSL-1 simplifies reflow-process qualification for high-volume consumer production.
Recommended
Hot-Swap and In-Rush Current Limiter
The ISC240P06LMATMA1's 188 W pulse power rating and avalanche-rated single-pulse robustness make it well-suited as a hot-swap FET that absorbs the inrush of charging bulk capacitors on a 12 V or 24 V backplane. By slewing the gate with an RC network (10 kΩ + 100 nF), the designer programs a turn-on time that holds the FET within its linear-region SOA until the capacitor charges. The SuperSO8 5x6 footprint matches industry-standard hot-swap layouts, allowing direct migration from legacy P-channel parts.
Recommended
LED Driver High-Side Switch
Driving high-brightness LED strings from a 12-24 V supply, the ISC240P06LMATMA1 functions as a high-side PWM switch with frequencies up to 100 kHz thanks to its low OptiMOS gate charge. The P-channel gate is driven by a logic-level signal referenced to ground, simplifying the interface to microcontrollers and LED-driver ICs. With 24 mΩ RDS(on) and 59 A ID rating, the part easily handles 5-10 A LED strings used in automotive matrix headlights and architectural lighting while keeping conduction loss below 3% of total power.
Recommended
Motor Drive Half-Bridge (Low-Side Coordination)
In a brushed DC or small BLDC drive, the ISC240P06LMATMA1 can serve as the high-side switch in a half-bridge paired with an N-channel low-side MOSFET such as the IPB60R040CFD7ATMA1. The P-channel's ground-referenced gate drive removes the need for a bootstrap diode, reducing component count for low-power fans, pumps and small actuators. The 60 V rating easily covers 24 V motor back-EMF, while the 24 mΩ RDS(on) keeps I²R heating manageable at 5-15 A continuous phase currents.
Recommended
Recommended Products Summary
Engineering reference data for ISC240P06LMATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB110P06LMATMA1 | ISC045N03L5SATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same |
| Polarity | P-Channel | P-Channel | N-Channel | N-Channel |
| VDS max | -60 V | -60 V | 30 V | 40 V |
| Continuous ID (Tc) | -59 A | -30 A | 45 A | 76 A |
| RDS(on) max @ VGS=10V | 24 mΩ | 110 mΩ | 4.5 mΩ | 7.6 mΩ |
| Power Dissipation | 188 W | 167 W | 139 W | 188 W |
| Technology | OptiMOS (trench, P-channel) | OptiMOS (trench, P-channel) | OptiMOS 5 (N-channel) | OptiMOS (N-channel) |
| Gate Drive | Logic-level P-channel (0 / -VGS) | Logic-level P-channel | Standard N-channel (gate above rail) | Standard N-channel (gate above rail) |
Key Differentiators
- P-channel topology eliminates bootstrap/charge-pump (vs N-channel 60 V MOSFETs in the same SuperSO8 footprint)
- Lower RDS(on) versus other Infineon P-channel 60 V parts (vs IPB110P06LMATMA1)
- High pulse power for hot-swap and inrush limiting (vs Smaller P-channel MOSFETs in TSOP-6 / SOT-23 packages)
Design Notes
Estimated: at VIN = 12 V, VDS = 60 V worst case, and pulsed ID = 30 A, instantaneous dissipation approaches 188 W but only for <100 µs; steady-state 10 A operation dissipates roughly 2.4 W (I²R), which on a 6 cm² copper pour with 6 thermal vias (~20 °C/W RthJA) gives a junction rise of ~48 °C above 25 °C ambient - well within the 175 °C maximum. Always solder the FL exposed pad; dry solder joints can raise RthJC by 5-10× and cause field failures.
Per Infineon's PG-TDSON-8 FL layout guideline, stitch the FL exposed pad to a continuous top-layer copper pour and connect to inner-layer ground/thermal planes with at least six 0.3 mm thermal vias in a 3×2 grid. Place the gate-drive trace away from the drain switching node to minimise dv/dt-induced false turn-on; a 10 kΩ gate-source resistor holds the FET off during MCU reset, and a small ferrite bead or 100 Ω series gate resistor damps high-frequency ringing on the gate.
Common pitfalls when using ISC240P06LMATMA1: (1) forgetting that the device is P-channel - the source must go to the more positive rail, otherwise the body diode conducts permanently; (2) omitting the gate pull-up resistor - the gate floats high-impedance during MCU reset and can partially turn on; (3) exceeding the 60 V VDS rating with inductive kick-back - always place a free-wheeling diode or TVS across inductive loads; (4) using the part outside MSL-1 handling rules for moisture-sensitive components.
Compliance Information
RoHS and lead-free per Infineon product page; AEC-Q100 not explicitly claimed for this part number on the manufacturer page; halogen-free status not stated in the verified data - [DATA_NEEDED].
