ISC240P06LMATMA1 vs ISC045N03L5SATMA1 比較

詳細並排比較 ISC240P06LMATMA1 由 Infineon 與 ISC045N03L5SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
ISC240P06LMATMA1 ISC240P06LMATMA1 - 60V P-Channel OptiMOS MOSFET | Infineon

ISC240P06LMATMA1 - 60V P-Channel OptiMOS MOSFET | Infineon

ISC240P06LMATMA1 ✓ 啟用中
Infineon
ISC045N03L5SATMA1 ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon

ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon

ISC045N03L5SATMA1 ✓ 啟用中

規格比較

參數 ISC240P06LMATMA1 ISC045N03L5SATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
Drain-Source Voltage (VDS) -60 V 30 V
Continuous Drain Current (ID, Tc) -59 A —
On-Resistance RDS(on) max @ VGS=-10V 24 mΩ —
Power Dissipation (Ta) 188 W —
Technology OptiMOS trench OptiMOS 5 / Trench
封裝 PG-TDSON-8 FL (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-6)
安裝類型 Surface Mount Surface Mount
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg typ [DATA_NEEDED: Qg typical value] —
工作接面溫度 -55 °C to +175 °C —
MSL 等級 1 (per JEDEC J-STD-020) —
Avalanche Rated Yes (single-pulse) —
Lead-Free / RoHS Yes (per Infineon product page) —
REACH Compliance Compliant —
Manufacturer — Infineon Technologies
Part Number — ISC045N03L5SATMA1
電晶體類型 — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TC=25°C — 63 A
On-Resistance RDS(on) max @ VGS=10V — 4.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 2 V @ ID=250 µA
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) — 13 nC @ VGS=10 V
Input Capacitance (Ciss) — 870 pF @ VDS=15 V
Power Dissipation (PD) at TA=25°C — 2.5 W
Power Dissipation (PD) at TC=25°C — 30 W
工作溫度範圍 — -55 °C to +150 °C
RoHS 狀態 — Compliant

資料表與資源

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