ISC800P06LMATMA1 vs IPD65R380E6ATMA1 Comparison
Detailed side-by-side comparison of ISC800P06LMATMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC800P06LMATMA1
ISC800P06LMATMA1 - 60V P-CH MOSFET, 19.6A, TDSON-8 | Infineon
ISC800P06LMATMA1 β ActiveInfineon
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΞ© 10.6A | Infineon
IPD65R380E6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC800P06LMATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.65 |
| FET Type | P-Channel | β |
| Drain-Source Voltage (VDS) | -60 V | β |
| Continuous Drain Current (ID) at TC | 19.6 A | β |
| Power Dissipation (PD) at TC | 83 W | β |
| Package | PG-TDSON-8 (TDSON EP, 5x6 mm) | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | Superjunction (CoolMOSβ’) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | β |
| Operating Temperature Range | -55 C to +175 C (junction) | -55 Β°C to +150 Β°C |
| Pin Count | 8 | β |
| Lead-Free | Yes (per Infineon product page) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Avalanche Rated | Yes (per Infineon datasheet) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | CoolMOSβ’ E6 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 650 V |
| Continuous Drain Current (I_D) at T_C | β | 10.6 A |
| R_DS(on) max at V_GS=10V | β | 380 mΞ© |
| R_DS(on) test conditions | β | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| Gate Threshold Voltage (V_GS(th)) | β | 3.5 V typ |
| Gate Charge (Q_G) | β | 39 nC at 10 V |
| Input Capacitance (C_iss) | β | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | β | 83 W |