ISC800P06LMATMA1 vs IPD65R380E6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC800P06LMATMA1 disebabkan oleh Infineon dan IPD65R380E6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC800P06LMATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC | 19.6 A | — |
| Power Dissipation (PD) at TC | 83 W | — |
| Kemasan | PG-TDSON-8 (TDSON EP, 5x6 mm) | PG-TO252-3 (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | Superjunction (CoolMOS™) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| Gambaran Suhu Operasi | -55 C to +175 C (junction) | -55 °C to +150 °C |
| Kiraan Pin | 8 | — |
| Lead-Free | Yes (per Infineon product page) | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 |
| Avalanche Rated | Yes (per Infineon datasheet) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS™ E6 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |