ISC800P06LMATMA1 vs IPD65R380E6ATMA1 对比
详细并排对比 ISC800P06LMATMA1 出自 Infineon 和 IPD65R380E6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC800P06LMATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.61 | $0.65 |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC | 19.6 A | — |
| Power Dissipation (PD) at TC | 83 W | — |
| 封装 | PG-TDSON-8 (TDSON EP, 5x6 mm) | PG-TO252-3 (DPAK), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | Superjunction (CoolMOS™) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| 工作温度范围 | -55 C to +175 C (junction) | -55 °C to +150 °C |
| 引脚数量 | 8 | — |
| Lead-Free | Yes (per Infineon product page) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 |
| Avalanche Rated | Yes (per Infineon datasheet) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS™ E6 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |