ISCH99N04NM7VATMA1 vs BSC019N04LSTATMA1 Comparison

Detailed side-by-side comparison of ISCH99N04NM7VATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISCH99N04NM7VATMA1

ISCH99N04NM7VATMA1 - 40V OptiMOS 7 N-Channel MOSFET | Infineon

ISCH99N04NM7VATMA1 βœ“ Active
Infineon
BSC019N04LSTATMA1

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 βœ“ Active

Specification Comparison

Parameter ISCH99N04NM7VATMA1 BSC019N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $1.21
Manufacturer Infineon Technologies β€”
Series OptiMOS 7 β€”
FET Type N-Channel β€”
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current at Ta (I_D) 40 A β€”
Pulsed Drain Current at Tc (I_DM) 284 A β€”
Power Dissipation at Ta (P_D) 3 W β€”
Power Dissipation at Tc (P_D) 150 W β€”
Gate Threshold Voltage (V_th) Up to 3.2 V β€”
Package PG-TDSON-8 (TDSON-8 FL) TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Technology OptiMOS 7 Trench Power MOSFET OptiMOS 5 (N-channel trench MOSFET)
Operating Mode Enhancement-mode β€”
Target Application 12 V to 48 V Motor Drives β€”
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID, Tc=25C) β€” 161 A
Continuous Drain Current (ID, Ta=25C) β€” 28 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V β€” 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V β€” [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ β€” 1.7 V
Total Gate Charge Qg typ β€” 85 nC
Power Dissipation PD (Tc=25C) β€” 94 W
Operating Temperature Range β€” -55 C to +150 C
MSL Level β€” 1 (unlimited)
Lead-Free / Halogen-Free β€” Yes / Yes
Avalanche Rated β€” Yes

Datasheets & Resources

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