ISZ019N03L5SATMA1 vs ISK057N04LM6ATSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ019N03L5SATMA1 disebabkan oleh Infineon dan ISK057N04LM6ATSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISK057N04LM6ATSA1 ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISZ019N03L5SATMA1 ISK057N04LM6ATSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 (<= 40V) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at TA=25C 22 A —
Continuous Drain Current (ID) at TC=25C 40 A —
RDS(on) at VGS=10V 1.9 mΩ (typical, ID=20A) —
Gate Threshold Voltage (VGS(th)) 2 V (typical) 2.3 V (typ)
Gate-Source Voltage Rating (VGS) ±20 V —
Total Gate Charge (Qg) 44 nC at VGS=10V —
Input Capacitance (Ciss) 2800 pF at VDS=15V 870 pF
Kemasan PG-TSDSON-8-FL (5x6 mm) PG-VSON-6-1 (PQFN 2x2 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (TJ max) -55C to +150C
Aras MSL 1 (per JEDEC J-STD-020) —
RoHS / REACH Compliant —
Avalanche Rated Yes —
RG-tested 100% —
Polarity — N-Channel
Gate-Source Voltage (VGS) Max — ±20 V
Continuous Drain Current (ID) at Ta=25C — 15 A
Continuous Drain Current (ID) at Tc=25C — 64 A
Power Dissipation (PD) at Ta — 2.1 W
Power Dissipation (PD) at Tc — 39.1 W
On-Resistance RDS(on) at VGS=10V — [DATA_NEEDED: typical RDS(on) at 10V]
On-Resistance RDS(on) at VGS=4.5V — 8.3 mOhm
Total Gate Charge (Qg) at VGS=10V — 12 nC
Output Capacitance (Coss) — 290 pF
Reverse Transfer Capacitance (Crss) — 21 pF
Status RoHS — Compliant
Technology — OptiMOS 6 Trench

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