ISZ023N06LM6ATMA1 - 60V 149A OptiMOS 6 N-Channel MOSFET | Infineon
MPN: ISZ023N06LM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.45 | $145.00 |
| 500 | $1.28 | $640.00 |
| 1,000 | $1.1 | $1,100.00 |
| 3,000 | $0.95 | $2,850.00 |
ISZ023N06LM6ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for switching and amplifying electronic signals in power conversion applications. MOSFETs sit within the broader hierarchy of discrete semiconductors, alongside IGBTs, BJTs, and diodes, and they dominate low-to-medium voltage (<200 V) synchronous rectification, hot-swap, motor drive, and DC-DC conversion designs. The 60 V class specifically targets automotive 12 V/24 V systems, telecom 48 V rails, industrial power supplies, and USB Power Delivery (USB-PD) fast-charging adapters.
Key specifications include an extremely low RDS(on) (per the OptiMOS 6 family, sub-3 mOhm typical at 10 V VGS), 60 V VDS rating, low gate charge Qg for fast switching, and an operating temperature range of -55C to +175C. The PG-TSDSON-8-34 package provides an exposed drain pad that minimizes thermal resistance and enables direct PCB copper-cooling, removing the need for an external heatsink at moderate dissipation levels. Logic-level VGS(th) ensures compatibility with standard 5 V and 3.3 V microcontroller GPIO drivers.
OptiMOS 6 technology uses Infineon's advanced trench-cell architecture with a refined gate structure and epitaxial layer that simultaneously minimizes conduction loss, switching loss, and output charge. The result is a device that excels in both hard-switching topologies (synchronous buck/boost converters) and soft-switching applications (LLC, phase-shifted full-bridge). Compared with older planar MOSFETs of the same RDS(on), OptiMOS 6 typically halves switching losses at 100-500 kHz frequencies.
Typical applications include 48 V telecom hot-swap controllers, automotive LED headlight drivers, USB-PD fast-charging adapters, e-bike and e-scooter motor controllers, server DC-DC point-of-load converters, and battery management systems (BMS) protection MOSFETs. Its combination of low RDS(on), high current pulse rating, and small footprint makes it especially suited to space-constrained, high-efficiency designs.
When designing with this part, ensure VGS drive is in the 10 V range for lowest RDS(on); 4.5 V VGS will work but increases conduction loss. PCB layout must keep the source-kelvin connection (pin 2) short and direct to the gate driver to prevent gate ringing. Thermal vias under the exposed pad are mandatory; a 6 cm2 copper pour per the datasheet is recommended for full 100 W rating.
This page synthesizes Infineon datasheet specifications, distributor pricing, and drop-in alternatives - providing engineering context not aggregated on distributor product pages.
Drop-in alternatives for ISZ023N06LM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISZ023N06LM6ATMA1 (same form factor and footprint) — differing in Technology, Package, Drain-Source Voltage (VDS), Operating Temperature Range, Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISZ072N06NM6ATMA1
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View Datasheet →ISC011N04NM7VATMA1
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View Datasheet →BSC076N04NDATMA1
✅ Drop-In✓ In Stock
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View Datasheet →NTMFS5C612NLT1G
✅ Drop-In📋 Reference alternative (not in catalog)
IPB60R040CFD7ATMA1
✅ Drop-In✓ In Stock
$5.19 / Unit
View Datasheet →ISZ023N06LM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 6 60 V |
| Part Number | ISZ023N06LM6 |
| Orderable Part Number | ISZ023N06LM6ATMA1 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta | 24 A |
| Pulsed Drain Current (ID, Tc) | 149 A |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 100 W |
| Package | PG-TSDSON-8-34 (Surface Mount) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +175C |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Configuration | Single |
ISZ023N06LM6ATMA1 Pin Configuration
| Pin 1 | DRAIN — Drain (also connected to thermal pad) |
| Pin 2 | GATE / KELVIN SOURCE — Gate input with Kelvin source reference for clean gate drive |
| Pin 3 | DRAIN — Drain (also connected to thermal pad) |
| Pin 4 | SOURCE — Source connection |
| Pin 5 | SOURCE — Source connection |
| Pin 6 | SOURCE — Source connection |
| Pin 7 | SOURCE — Source connection |
| Pin 8 | SOURCE — Source connection |
Safe Operating Area
Typical Applications
ISZ023N06LM6ATMA1 is suitable for 6 applications: 48 V Telecom Hot-Swap Controller, Automotive LED Headlight Driver, USB-PD Fast-Charging Adapter, E-Bike / E-Scooter Motor Controller, Server DC-DC Point-of-Load Converter, Battery Management System Protection MOSFET.
48 V Telecom Hot-Swap Controller
The ISZ023N06LM6ATMA1 excels in 48 V telecom hot-swap circuits where it serves as the main pass-MOSFET protecting downstream DC-DC converters from inrush current and board faults. Its 60 V VDS provides 12 V margin above the 48 V nominal rail, allowing it to withstand transient spikes defined by Telcordia GR-1089. The 149 A pulsed current rating handles the simultaneous inrush of multiple downstream point-of-load converters, while the 24 A continuous rating covers steady-state server rack loads. With sub-3 mOhm typical RDS(on), conduction loss at 10 A is minimal, reducing heatsinking requirements in space-constrained ATCA/AdvancedTCA cards. The PG-TSDSON-8-34 package enables top-side cooling, and the OptiMOS 6 low Qg ensures fast turn-off during fault events to protect upstream fuses.
Recommended
Automotive LED Headlight Driver
In automotive LED headlight modules, the ISZ023N06LM6ATMA1 functions as the high-side switching element in a buck or buck-boost LED driver topology. Its 60 V VDS comfortably handles the 12 V/24 V automotive bus with load-dump transient margin (per ISO 7637-2), and its 175C maximum junction temperature suits under-hood thermal environments. The OptiMOS 6 technology's low Qg and Qgd enables PWM dimming above 1 kHz without audible noise or excessive switching loss. The compact PG-TSDSON-8-34 footprint allows placement directly behind the LED PCB, minimizing loop inductance. Compared with older planar MOSFETs of similar RDS(on), the OptiMOS 6 platform cuts switching losses by ~50%, enabling higher PWM frequencies and smaller magnetics in the headlight ballast.
Recommended
USB-PD Fast-Charging Adapter
The ISZ023N06LM6ATMA1 is an excellent choice for USB Power Delivery 100 W+ adapter designs where it serves as the synchronous rectifier MOSFET on the secondary side of a flyback or active-clamp forward converter. Its 60 V VDS provides margin over the 20 V PD output range even with ringing, and its ultra-low RDS(on) (sub-3 mOhm typical for the OptiMOS 6 class) minimizes conduction loss in continuous-conduction-mode operation. The OptiMOS 6 family's low Qoss reduces losses during valley switching at 100-300 kHz, contributing to >93% adapter efficiency required by CoC Tier 2 and 80 PLUS standards. The PG-TSDSON-8-34 footprint with exposed thermal pad enables top-side cooling in compact GaN-coexisting designs.
Recommended
E-Bike / E-Scooter Motor Controller
In e-bike and e-scooter motor controllers, the ISZ023N06LM6ATMA1 is used as the low-side switch in a 3-phase BLDC or FOC inverter driving 36 V / 48 V battery packs. Its 149 A pulsed drain current handles the high transient currents during motor startup and hill climbs, while the 24 A continuous rating covers steady-state cruising. The OptiMOS 6 technology's low RDS(on) and fast switching enable 20-50 kHz PWM frequencies that push the audibility limit above human hearing while keeping magnetics small. The PG-TSDSON-8-34 package's exposed pad allows direct PCB copper cooling, eliminating the need for a separate heatsink in the constrained controller housing. The -55C to +175C operating range handles cold-weather storage and hot-motor-bay conditions.
Recommended
Server DC-DC Point-of-Load Converter
In server and datacom 48 V-to-POL converter designs, the ISZ023N06LM6ATMA1 serves as the primary-side or secondary-side synchronous MOSFET in a buck or resonant topology. Its 60 V VDS comfortably handles 48 V nominal with transient margin, and its low RDS(on) reduces conduction loss in high-current (>20 A) POL stages. The OptiMOS 6 platform's low Qg and Qrr enables 500 kHz+ switching frequencies that shrink the output inductor and capacitor count, increasing power density. The PG-TSDSON-8-34 footprint supports top-side cooling through PCB copper, critical for server airflow management. The device's 100 W power dissipation rating (Tc) suits multi-phase POL designs where multiple MOSFETs share the thermal load.
Recommended
Battery Management System Protection MOSFET
In battery management systems (BMS) for 24 V / 36 V / 48 V battery packs, the ISZ023N06LM6ATMA1 is used as the charge/discharge protection MOSFET. Its low RDS(on) minimizes voltage drop during normal operation, preserving battery runtime, while its 60 V VDS rating covers the fully-charged 48 V pack voltage with safety margin. The 149 A pulsed current rating handles inrush during capacitive load connection and short-circuit events before the protection IC triggers. The OptiMOS 6 technology's logic-level VGS(th) enables direct GPIO drive from the BMS microcontroller without a separate gate driver. The compact PG-TSDSON-8-34 footprint saves PCB area in multi-cell BMS designs where 8-16 MOSFETs may be required for cell balancing and pack protection.
Recommended
Recommended Products Summary
Engineering reference data for ISZ023N06LM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISZ072N06NM6ATMA1 | ISC011N04NM7VATMA1 | BSC076N04NDATMA1 | NTMFS5C612NLT1G | IPB60R040CFD7ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8-34 | PG-TSDSON-8-34 - same | PG-TSDSON-8-34 - same | PG-TSDSON-8-34 - same | PQFN-8 (5x6 mm) - compatible | PG-TO263-7 - larger |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Infineon Technologies |
| VDS Max | 60 V | 60 V | 40 V | 40 V | 60 V | 600 V |
| Technology | OptiMOS 6 (Trench) | OptiMOS 6 (Trench) | OptiMOS 7 (Trench) | OptiMOS 5 (Trench) | Shielded Gate Trench | CoolMOS CFD7 |
| Operating Temperature | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +150C |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Industry-leading OptiMOS 6 figure-of-merit (vs ISZ072N06NM6ATMA1)
- 60 V VDS for 48 V bus applications (vs ISC011N04NM7VATMA1 / BSC076N04NDATMA1)
- Cross-brand pin-compatible alternative exists (vs NTMFS5C612NLT1G (onsemi))
Design Notes
Estimated: At 24 A continuous drain current and 25 mOhm RDS(on), the ISZ023N06LM6ATMA1 dissipates approximately 14.4 W of conduction loss. Per the Infineon datasheet thermal conditions, achieving full 24 A Ta rating requires 6 cm2 of PCB copper on the drain pad with thermal vias to the opposite plane. Without this copper area, derate to ~10-12 A continuous. For sustained 100 W operation (Tc), forced air cooling or a heatsink is required. Always cross-reference the datasheet's Diagram 3 thermal curves for your specific layout.
The PG-TSDSON-8-34 package requires careful PCB layout to achieve rated performance. Place thermal vias (0.3 mm drill, 0.6 mm pitch, 12+ vias) directly under the exposed drain pad to the opposite inner plane. Keep the gate-drive loop (pin 2 to gate driver) under 5 mm total length to minimize parasitic inductance and gate ringing. Use a star-ground connection from the MOSFET source pins to the gate-driver ground return to avoid ground bounce. Maintain 1 mm clearance between drain traces and any signal lines to meet 60 V isolation requirements.
Do not exceed VGS = +/-20 V absolute maximum; gate-oxide rupture is permanent. Ensure gate drive voltage is in the 10 V range for lowest RDS(on); driving at 4.5 V increases conduction loss 30-50%. The Kelvin source pin (pin 2) MUST be used as the gate-driver return - connecting gate drive to a non-Kelvin source pin causes gate ringing and potential MOSFET failure. Do not parallel two ISZ023N06LM6ATMA1 without gate-source resistors on each device to suppress parasitic oscillation.
For switching applications above 100 kHz, minimize the power-loop inductance by placing input capacitors as close as possible to the drain-source loop. Use wide, short copper pours on top and bottom layers for the drain-source power path. The exposed thermal pad should be soldered to a copper pour with thermal vias; do not leave it unconnected - this degrades both thermal performance and mechanical reliability. For high-current designs (>15 A continuous), use 2 oz copper on all layers.
Compliance Information
RoHS and REACH compliance per Infineon product page. AEC-Q100 qualification not explicitly stated in available data; automotive grade versions may exist in the same family - check with Infineon for specific automotive part numbers. Lead-free (Pb-free) reflow compatible per MSL1 rating.
