ISZ025N06NM6ATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of ISZ025N06NM6ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ025N06NM6ATMA1
ISZ025N06NM6ATMA1 - 60V 137A OptiMOS 6 N-Channel MOSFET | Infineon
ISZ025N06NM6ATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | ISZ025N06NM6ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60 V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 137 A | β |
| Continuous Drain Current (ID, Ta) | 22 A | β |
| Maximum RDS(on) at VGS=10V | 2.5 mΞ© | β |
| Gate Threshold Voltage (VGS(th), typ) | 3.3 V | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 100 W | β |
| Package | PG-TSDSON-8-34 (5x6 mm) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Gate Drive Voltage (VGS) | Β±20 V max | β |
| Technology | Trench MOSFET | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | 1 (per JEDEC J-STD-020) |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Automotive Qualification | β | AEC-Q101 (per part number suffix) |