ISZ025N06NM6ATMA1 vs IAUC60N04S6L030HATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ025N06NM6ATMA1 disebabkan oleh Infineon dan IAUC60N04S6L030HATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISZ025N06NM6ATMA1 IAUC60N04S6L030HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 60 V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Tc=25°C) 137 A —
Continuous Drain Current (ID, Ta) 22 A —
Maximum RDS(on) at VGS=10V 2.5 mΩ —
Gate Threshold Voltage (VGS(th), typ) 3.3 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Kemasan PG-TSDSON-8-34 (5x6 mm) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +175 °C —
Gate Drive Voltage (VGS) ±20 V max —
Technology Trench MOSFET —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL moisture sensitivity level] 1 (per JEDEC J-STD-020)
Part Series — OptiMOS 6
Configuration — Half-Bridge (2 N-Channel)
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
Suhu Hubungan Operasi — -55 C to +175 C
Automotive Qualification — AEC-Q101 (per part number suffix)

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