ISZ033N03LF2SATMA1 vs BSZ0501NSIATMA1 Comparison

Detailed side-by-side comparison of ISZ033N03LF2SATMA1 by Infineon and BSZ0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISZ033N03LF2SATMA1 BSZ0501NSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 20 A —
Continuous Drain Current (ID) at TC=25C 109 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TA=25C 3 W —
Power Dissipation (PD) at TC=25C 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 2.35 V max @ 30 uA —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] [DATA_NEEDED: Qg]
Operating Junction Temperature -55 C to +175 C —
Package PG-TSDSON-8 FL (8-pin) PG-TSDSON-8-FL (3.3 x 3.3 mm)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 —
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSZ0501NSIATMA1
Product Family — OptiMOS 5 (25V/30V)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) at TA=25C — 25 A
Continuous Drain Current (Id) at TC=25C — 40 A
Power Dissipation (Pd) at TA=25C — 2.1 W
Power Dissipation (Pd) at TC=25C — 50 W
Operating Mode — Enhancement Mode
Configuration — Single with built-in diode
Number of Terminals — 8
JESD-609 Code — e3 (matte tin)
MSL Level — [DATA_NEEDED: MSL rating]
Rds(on) at Vgs=10V (typ) — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Operating Temperature Range — [DATA_NEEDED: Tj max]

Datasheets & Resources

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