ISZ056N03LF2SATMA1 vs IQE020N04LM6CGSCATMA1 Comparison
Detailed side-by-side comparison of ISZ056N03LF2SATMA1 by Infineon and IQE020N04LM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 β ActiveInfineon
IQE020N04LM6CGSCATMA1
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΞ© N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 β ActiveSpecification Comparison
| Parameter | ISZ056N03LF2SATMA1 | IQE020N04LM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | StrongIRFET 2 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at Ta | 16 A | β |
| Continuous Drain Current (ID) at Tc | 72 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | β |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | β |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 52 W | β |
| Operating Temperature Range | -55 C to +175 C | -55 Β°C to +150 Β°C (junction, per Infineon MOSFET convention) |
| Package | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Part Family | β | OptiMOS 6 low-voltage power MOSFET |
| Channel Type | β | N-Channel |
| Continuous Drain Current at TA=25Β°C | β | 25 A |
| Continuous Drain Current at TC=25Β°C | β | 166 A |
| Maximum RDS(on) | β | 2.0 mΞ© (per IQE part-number decode) |
| Power Dissipation at TA=25Β°C | β | 2.5 W |
| Power Dissipation at TC=25Β°C | β | 107 W |
| Pin Count | β | 9 |
| Lead-Free | β | Yes |
| MSL Level | β | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) |
| Technology | β | OptiMOS 6 trench |