ISZ072N06NM6ATMA1 vs IQE020N04LM6CGSCATMA1 Comparison

Detailed side-by-side comparison of ISZ072N06NM6ATMA1 by Infineon and IQE020N04LM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ072N06NM6ATMA1

ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 βœ“ Active
Infineon
IQE020N04LM6CGSCATMA1

IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΞ© N-MOSFET, PG-WHTFN-9

IQE020N04LM6CGSCATMA1 βœ“ Active

Specification Comparison

Parameter ISZ072N06NM6ATMA1 IQE020N04LM6CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $1.65
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 60V β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Tc=25Β°C) 57 A β€”
Continuous Drain Current (ID, Ta) 12.7 A β€”
RDS(on) max @ VGS=10V 7.2 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 3.3 V (typ) β€”
Power Dissipation (Tc=25Β°C) 50 W β€”
Power Dissipation (Ta) 2.5 W β€”
Package PG-TSDSON-8-34 (TSDSON-8 FL) PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C ( Tj max 175C ) -55 Β°C to +150 Β°C (junction, per Infineon MOSFET convention)
Technology OptiMOS 6 trench MOSFET OptiMOS 6 trench
RoHS Status Compliant Compliant
MSL Level 1 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs)
Part Family β€” OptiMOS 6 low-voltage power MOSFET
Channel Type β€” N-Channel
Continuous Drain Current at TA=25Β°C β€” 25 A
Continuous Drain Current at TC=25Β°C β€” 166 A
Maximum RDS(on) β€” 2.0 mΞ© (per IQE part-number decode)
Power Dissipation at TA=25Β°C β€” 2.5 W
Power Dissipation at TC=25Β°C β€” 107 W
Pin Count β€” 9
Lead-Free β€” Yes

Datasheets & Resources

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