ISZ15EP15LMATMA1 vs IPC50N04S5L5R5ATMA1 Comparison
Detailed side-by-side comparison of ISZ15EP15LMATMA1 by Infineon and IPC50N04S5L5R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ15EP15LMATMA1
ISZ15EP15LMATMA1 - 150V P-Channel OptiMOS MOSFET | Infineon
ISZ15EP15LMATMA1 β ActiveInfineon
IPC50N04S5L5R5ATMA1
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΞ© OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 β ActiveSpecification Comparison
| Parameter | ISZ15EP15LMATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.28 | $0.36 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS | β |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) max | -150 V | β |
| Drain-Source On-Resistance (RDS(on)) max | 1500 mOhm @ VGS = -10 V | β |
| Continuous Drain Current (ID) at TA=25C | 820 mA | β |
| Continuous Drain Current (ID) at TC=25C | 2.7 A | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Power Dissipation (PD) at TC=25C | 26.3 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Technology | OptiMOS trench-gate | β |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) with exposed pad | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55 Β°C to +175 Β°C |
| RoHS Status | Compliant | β |
| MSL Level | 1 | β |
| Packaging | Tape and Reel (T&R) | β |
| Transistor Type | β | N-Channel MOSFET |
| Mode | β | Enhancement Mode |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc) | β | 50 A |
| Maximum Drain Current (silicon-limited, 25 Β°C) | β | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | β | 5.5 mΞ© |
| Gate Threshold VGS(th) | β | Logic Level (enhancement at β€ 4.5 V VGS) |
| Power Dissipation (Tc) | β | 42 W |
| Thermal Resistance Junction-to-Case RthJC | β | 3.6 K/W |
| AEC-Q101 Qualification | β | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | β | MSL1 |
| Peak Reflow Temperature | β | 260 Β°C |
| Avalanche Rating | β | 100 % Avalanche Tested |
| RoHS / REACH | β | RoHS Compliant (Green Product) |