ISZ15EP15LMATMA1 vs IPC50N04S5L5R5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ15EP15LMATMA1 disebabkan oleh Infineon dan IPC50N04S5L5R5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISZ15EP15LMATMA1 IPC50N04S5L5R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS —
Polarity P-Channel —
Drain-Source Voltage (VDS) max -150 V —
Drain-Source On-Resistance (RDS(on)) max 1500 mOhm @ VGS = -10 V —
Continuous Drain Current (ID) at TA=25C 820 mA —
Continuous Drain Current (ID) at TC=25C 2.7 A —
Power Dissipation (PD) at TA=25C 2.5 W —
Power Dissipation (PD) at TC=25C 26.3 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Technology OptiMOS trench-gate —
Kemasan PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) with exposed pad PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) -55 °C to +175 °C
Status RoHS Compliant —
Aras MSL 1 —
Packaging Tape and Reel (T&R) —
Jenis Transistor — N-Channel MOSFET
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

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