ISZ15EP15LMATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of ISZ15EP15LMATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ15EP15LMATMA1
ISZ15EP15LMATMA1 - 150V P-Channel OptiMOS MOSFET | Infineon
ISZ15EP15LMATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | ISZ15EP15LMATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.28 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | β |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) max | -150 V | β |
| Drain-Source On-Resistance (RDS(on)) max | 1500 mOhm @ VGS = -10 V | β |
| Continuous Drain Current (ID) at TA=25C | 820 mA | β |
| Continuous Drain Current (ID) at TC=25C | 2.7 A | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Power Dissipation (PD) at TC=25C | 26.3 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Technology | OptiMOS trench-gate | Trench MOSFET, silicon |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) with exposed pad | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55 Β°C to +175 Β°C (TJ) |
| RoHS Status | Compliant | β |
| MSL Level | 1 | MSL 1 (per JEDEC J-STD-020) |
| Packaging | Tape and Reel (T&R) | β |
| Product Family | β | OptiMOS 7 Power-Transistor |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| RoHS Compliance | β | Compliant (per Infineon product page) |