ISZ15EP15LMATMA1 vs ISC011N04NM7VATMA1 Perbandingan
Perbandingan bersamaan detil ISZ15EP15LMATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISZ15EP15LMATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) max | -150 V | — |
| Drain-Source On-Resistance (RDS(on)) max | 1500 mOhm @ VGS = -10 V | — |
| Continuous Drain Current (ID) at TA=25C | 820 mA | — |
| Continuous Drain Current (ID) at TC=25C | 2.7 A | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Power Dissipation (PD) at TC=25C | 26.3 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Technology | OptiMOS trench-gate | Trench MOSFET, silicon |
| Paket | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) with exposed pad | PG-TDSON-8 (source-down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55 °C to +175 °C (TJ) |
| Status RoHS | Compliant | — |
| Level MSL | 1 | MSL 1 (per JEDEC J-STD-020) |
| Packaging | Tape and Reel (T&R) | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |