ISZ15EP15LMATMA1 vs ISC011N04NM7VATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISZ15EP15LMATMA1 sa pamamagitan ng Infineon at ISC011N04NM7VATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISZ15EP15LMATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) max | -150 V | — |
| Drain-Source On-Resistance (RDS(on)) max | 1500 mOhm @ VGS = -10 V | — |
| Continuous Drain Current (ID) at TA=25C | 820 mA | — |
| Continuous Drain Current (ID) at TC=25C | 2.7 A | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Power Dissipation (PD) at TC=25C | 26.3 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Technology | OptiMOS trench-gate | Trench MOSFET, silicon |
| Packhaging | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) with exposed pad | PG-TDSON-8 (source-down) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55 °C to +175 °C (TJ) |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | 1 | MSL 1 (per JEDEC J-STD-020) |
| Packaging | Tape and Reel (T&R) | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |