JMTG100N06A vs DMN3190LDW-7 Comparison
Detailed side-by-side comparison of JMTG100N06A by Jiejie Micro and DMN3190LDW-7 by Diodes Incorporated. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ ActiveSpecification Comparison
| Parameter | JMTG100N06A | DMN3190LDW-7 |
|---|---|---|
| Brand | Jiejie Micro | Diodes Incorporated |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.15 | $0.10 |
| Manufacturer | Jiangsu JieJie Microelectronics Co., Ltd | — |
| Transistor Type | N-Channel Power Trench MOSFET | — |
| Drain-Source Voltage V(DSS) | 60 V | — |
| Continuous Drain Current I(D) | 55 A (at V(GS)=10 V, T(C)=25 °C) | — |
| R(DS(on)) Typ @ V(GS)=10 V | 7.7 mΩ | — |
| R(DS(on)) Typ @ V(GS)=4.5 V | 8.9 mΩ | — |
| Gate Threshold Voltage V(GS(th)) Typ | 1.5 V | — |
| Package | PDFN5x6-8L (Power DFN 5×6 mm, 8 leads) | SOT-363 (SC-70-6) 6-pin |
| Mounting Type | Surface Mount | Surface Mount |
| Plating | Pb-free | — |
| Halogen Free | Yes | — |
| RoHS | Compliant | — |
| UIS (Avalanche) Tested | 100 % | — |
| V(DS) Tested | 100 % | — |
| EAS Test Condition | T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A | — |
| Primary Applications | Load Switch, PWM, DC-DC, Motor Drive | — |
| FET Type | — | Dual N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 30 V |
| Gate-Source Voltage (VGS) | — | 20 V |
| Continuous Drain Current (ID) | — | 1 A |
| Power Dissipation (PD) | — | 320 mW |
| Operating Temperature | — | -55C to +150C |
| Configuration | — | Dual, independent drains |
| Technology | — | Silicon N-Channel MOSFET |
| Channel Mode | — | Enhancement |
| MSL Level | — | 1 (unlimited) |
| RoHS Status | — | Compliant |
| Lead-Free | — | Yes |
| Factory Pack Quantity | — | 3000 |