K4A4G085WD-BCTD vs H5AN4G8NBJR-PBC Comparison
Detailed side-by-side comparison of K4A4G085WD-BCTD by Samsung Electronics and H5AN4G8NBJR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A4G085WD-BCTD | H5AN4G8NBJR-PBC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $2.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Die Generation | D-die | — |
| Density | 4 Gb | — |
| Organization | 512M x 8 | 512M x 8 |
| Data Rate | 2666 Mbps/pin | — |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0C to +85C | — |
| Package | 78-ball FBGA | 78-ball FBGA |
| Ball Pitch | 0.8 mm | — |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR4 (JEDEC-compatible) | — |
| Speed Class | DDR4-2666 (PC4-21300) | — |
| Bank Architecture | DDR4 bank-group architecture | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance status] | — |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Density | — | 4 Gbit |
| Interface Type | — | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Speed Grade | — | PBC |
| Clock Frequency | — | [DATA_NEEDED: Clock Frequency] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Normal Operating Case Temperature | — | 0C to 85C |
| Extended Temperature Range | — | up to 95C case (with increased refresh) |
| Lead Free | — | Yes |
| Halogen Free | — | Yes |
| Refresh | — | 8n prefetch, standard/auto refresh per DDR4 JEDEC |