K4A4G165WD-BCRC vs H5AN4G6NBJR-PBC Comparison
Detailed side-by-side comparison of K4A4G165WD-BCRC by Samsung Electronics and H5AN4G6NBJR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G165WD-BCRC | H5AN4G6NBJR-PBC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.10 | $6.60 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 (268435456 words x 16 bits) |
| Speed Bin | DDR4-2400 (BCRC) | — |
| Supply Voltage | 1.2 V | — |
| Package | FBGA-96 | FBGA-96 (PBGA96), rectangular |
| Mounting Type | Surface Mount | Surface Mount |
| Process Generation | Samsung D-die | — |
| Interface Type | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range for -C grade] |
| RoHS Status | Lead free / RoHS Compliant | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Memory Density | — | 4 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface | — | DDR4 (double data rate, synchronous) |
| Package Code | — | TFBGA |
| Number of Terminals | — | 96 |
| Features | — | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC |
| Data Rate / Speed Grade | — | [DATA_NEEDED: speed grade PBC data rate] |
| CAS Latency | — | [DATA_NEEDED: CAS latency for PBC speed grade] |
| Process | — | CMOS |
| Lead-Free / Halogen-Free | — | Yes (per family datasheet, Lead-Free & Halogen-Free) |
| Temperature Grade | — | OTHER (per distributor listing) |