K4A4G165WD-BCRC vs H5AN4G6NBJR-PBC 对比
详细并排对比 K4A4G165WD-BCRC 出自 Samsung Electronics 和 H5AN4G6NBJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G165WD-BCRC | H5AN4G6NBJR-PBC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.10 | $6.60 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 (268435456 words x 16 bits) |
| Speed Bin | DDR4-2400 (BCRC) | — |
| 电源电压 | 1.2 V | — |
| 封装 | FBGA-96 | FBGA-96 (PBGA96), rectangular |
| 安装类型 | Surface Mount | Surface Mount |
| Process Generation | Samsung D-die | — |
| 接口类型 | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range for -C grade] |
| RoHS 状态 | Lead free / RoHS Compliant | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Memory Density | — | 4 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| 接口 | — | DDR4 (double data rate, synchronous) |
| Package Code | — | TFBGA |
| Number of Terminals | — | 96 |
| 特性 | — | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC |
| Data Rate / Speed Grade | — | [DATA_NEEDED: speed grade PBC data rate] |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency for PBC speed grade] |
| Process | — | CMOS |
| Lead-Free / Halogen-Free | — | Yes (per family datasheet, Lead-Free & Halogen-Free) |
| Temperature Grade | — | OTHER (per distributor listing) |